| Allicdata Part #: | IRLR3802TRLPBF-ND |
| Manufacturer Part#: |
IRLR3802TRLPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 12V 84A DPAK |
| More Detail: | N-Channel 12V 84A (Tc) 88W (Tc) Surface Mount D-Pa... |
| DataSheet: |  IRLR3802TRLPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | HEXFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 12V |
| Current - Continuous Drain (Id) @ 25°C: | 84A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.8V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 15A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 5V |
| Vgs (Max): | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds: | 2490pF @ 6V |
| FET Feature: | -- |
| Power Dissipation (Max): | 88W (Tc) |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | D-Pak |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The IRLR3802TRLPBF is a robust, high-performance N-channel, enhancement mode Field Effect Transistor (FET) from Infineon. It is a single transistor that has a wide range of applicability and is suitable for a variety of applications. This article will discuss the application fields and the working principle of the IRLR3802TRLPBF.
Application Fields:
The IRLR3802TRLPBF is a high-voltage and low on-resistance transistor, which makes it suitable for motor control systems, including DC motor drives and solenoid control. In addition, it is also suitable for high voltage switching applications such as medical equipment and power switching. Finally, it can be used in battery-powered products, LED lighting and LED lighting controllers.
Working Principle:
In general, the IRLR3802TRLPBF operates off of a N-channel enhancement mode MOSFET. This type of MOSFET is designed to control the current flow between a pair of electrodes. When a positive gate voltage is applied, the field effect is generated and current flows through the two terminals of the transistor. The width of the channel between the gate and the source decreases with a positive gate voltage and increases when a negative voltage is applied. This leads to an increase in current flow, which is defined as “on” state. Conversely, when the gate voltage is reduced, the channel width increases and current flow decreases, leading to a lower current flow and defined as “off” state.
In summary, the IRLR3802TRLPBF is a robust, high-performance N-channel, enhancement mode Field Effect Transistor (FET) suitable for a variety of applications including motor control systems, high voltage switching, battery-powered products and LED lighting. It operates off of a N-channel enhancement mode MOSFET and is able to control current flow between a pair of electrodes.
The specific data is subject to PDF, and the above content is for reference
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