SI1417EDH-T1-E3

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The SI1417EDH-T1-E3 is a single-channel high-side/low-side MOSFET driver designed to provide maximum output current and switching speed for driving power MOSFETs. The device is a monolithic integrated circuit with four chip types integrated on a single substrate. It consists of two power drivers, two isolated amplifiers, four low-level drivers, and two low-level drivers.

Application fields and working principle

The SI1417EDH-T1-E3 is suitable for driving both N-channel and P-channel MOSFETs for a wide range of applications such as motor control, load switching, power supply switching, and lighting control. Its integrated design makes it ideal for space-constrained applications. The device has three operating modes, which include low-side driver, high-side driver, and dual-side driver, to provide maximum flexibility and efficiency.

The SI1417EDH-T1-E3 operates by providing control signals to the gate of the MOSFETs. This control signal is generated by an internal oscillator and amplified by two power drivers. The device provides additional current-limiting protection, which ensures that the MOSFET is not over-driven at high input current conditions. Moreover, the device provides extra features such as thermal shutdown protection, logic level compatibility, and current limiting capability, which further improve its efficiency and reliability.

The device has a built-in high-side detector, which can sense load current and provide over-current protection. The device also has a built-in open-drain controller for improved thermal performance. The device can also be configured to work in different modes, such as low-side gain-clamping mode and high-side gain-clamping mode, which can enable optimal operation of the device. The device also provides internal fault protection and can be programmed with external diagnostic bits to enable further array protection.

The SI1417EDH-T1-E3 has the ability to drive MOSFETs in their saturation region. This ensures maximum efficiency, as the power dissipation in the MOSFET is reduced. Furthermore, the driver also provides fast switching speed, resulting in reduced switching time and improved reliability. Overall, the device is an ideal choice for applications requiring improved performance and reduced system costs.

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