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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
2SK3483-AZ-ND	2SK3483-AZ	Renesas Electronics America	View more Packaging: Bulk Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 28A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 52 mOhm @ 14A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2300pF @ 10V Power Dissipation (Max): 1W (Ta), 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (MP-3) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1+: $0
RJK4013DPE-00#J 3-ND	RJK4013DPE-00#J 3	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400V Current - Continuous Drain (Id) @ 25C: 17A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 300 mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 25V Power Dissipation (Max): 100W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	1000 Order	1+: $0
2SK122800LTR-ND	2SK122800L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25C: 50mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V Rds On (Max) @ Id, Vgs: 50 Ohm @ 10mA, 2.5V Vgs(th) (Max) @ Id: 1.1V @ 100A Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 5V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: Mini3-G1 Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
2SK303000LTR-ND	2SK303000L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 230 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V Power Dissipation (Max): 1W (Ta), 15W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: U-G1 Package / Case: U-G1	3000 Order	3000+: $0.5695
FL6L52070L-ND	FL6L52070L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1mA Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 540mW (Ta) Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSSMini6-F1 Package / Case: 6-SMD, Flat Leads	1000 Order	10000+: $0.1409
NP100P06PDG-E1- AY-ND	NP100P06PDG-E1- AY	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 10V Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--
RJK1055DPB-00#J 5TR-ND	RJK1055DPB-00#J 5	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 23A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 17 mOhm @ 11.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	1000 Order	1+: $0
2SK4093TZ-E-ND	2SK4093TZ-E	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 2.6 Ohm @ 500mA, 4V Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Power Dissipation (Max): 900mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-92MOD Package / Case: TO-226-3, TO-92-3 Long Body	1000 Order	1+: $0
RJK1002DPN-E0#T 2-ND	RJK1002DPN-E0#T 2	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 70A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 35A, 10V Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 10V Power Dissipation (Max): 150W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1000 Order	1+: $0
RJK0355DSP-01#J 0-ND	RJK0355DSP-01#J 0	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V Power Dissipation (Max): 1.8W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Package / Case: 8-SOIC (0.154", 3.90mm Width)	1000 Order	1+: $0
NP88N04KUG-E1-A Y-ND	NP88N04KUG-E1-A Y	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 88A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 (DPak) Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
FJ3303010L-ND	FJ3303010L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 7 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1A Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Power Dissipation (Max): 100mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSSMini3-F2-B Package / Case: SOT-723	1000 Order	--
NP90N055MUK-S18 -AY-ND	NP90N055MUK-S18 -AY	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7350pF @ 25V Power Dissipation (Max): 1.8W (Ta), 176W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack	1000 Order	--
2SK3482-AZ-ND	2SK3482-AZ	Renesas Electronics America	View more Packaging: Bulk Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 36A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 10V Power Dissipation (Max): 1W (Ta), 50W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-251 (MP-3) Package / Case: TO-251-3 Short Leads, IPak, TO-251AA	1000 Order	1850+: $0.5736
HAT2261H-EL-E-N D	HAT2261H-EL-E	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 10V Power Dissipation (Max): 25W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-LFPAK Package / Case: SC-100, SOT-669	1000 Order	--
NP40N10YDF-E1-A Y-ND	NP40N10YDF-E1-A Y	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250A Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V Power Dissipation (Max): 1W (Ta), 120W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HSON Package / Case: 8-PowerLDFN	1000 Order	1+: $0
NP83P06PDG-E1-A YTR-ND	NP83P06PDG-E1-A Y	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 83A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.8 mOhm @ 41.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 10V Power Dissipation (Max): 1.8W (Ta), 150W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
NP100N04PUK-E1- AY-ND	NP100N04PUK-E1- AY	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7050pF @ 25V Power Dissipation (Max): 1.8W (Ta), 176W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-4, DPak (3 Leads + Tab), TO-263AA	1000 Order	--
RJK5020DPK-00#T 0-ND	RJK5020DPK-00#T 0	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 118 mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 126nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 25V Power Dissipation (Max): 200W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
RJK0855DPB-00#J 5TR-ND	RJK0855DPB-00#J 5	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 11 mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 10V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	1000 Order	2500+: $0.7238
2SJ0674G0LTR-ND	2SJ0674G0L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 100mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 18 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1A Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 12pF @ 3V Power Dissipation (Max): 100mW (Ta) Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSSMini3-F2 Package / Case: SOT-723	1000 Order	--
RJK6006DPP-E0#T 2-ND	RJK6006DPP-E0#T 2	Renesas Electronics America	View more Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 25V Power Dissipation (Max): 29W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
RJL5014DPK-00#T 0-ND	RJL5014DPK-00#T 0	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 19A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 400 mOhm @ 9.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Power Dissipation (Max): 150W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P Package / Case: TO-3P-3, SC-65-3	1000 Order	1+: $0
UPA2812T1L-E2-A T-ND	UPA2812T1L-E2-A T	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 3740pF @ 10V Power Dissipation (Max): 1.5W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HWSON (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
MTM231232LBFTR- ND	MTM231232LBF	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Rds On (Max) @ Id, Vgs: 55 mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SMini3-G1-B Package / Case: SC-70, SOT-323 Base Part Number: MTM231232	24000 Order	--
UPA2764T1A-E2-A Y-ND	UPA2764T1A-E2-A Y	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 130A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 2.45 mOhm @ 35A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 7930pF @ 10V Power Dissipation (Max): 1.5W (Ta), 83W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-HVSON (5.4x5.15) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
MTMF82310BBFTR- ND	MTMF82310BBF	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 10V Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SO8-F1-B Package / Case: 8-SMD, Flat Lead	3000 Order	3000+: $0.9873
NP90N04MUG-S18- AY-ND	NP90N04MUG-S18- AY	Renesas Electronics America	View more Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 90A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3 mOhm @ 45A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V Power Dissipation (Max): 1.8W (Ta), 217W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
RJK2006DPE-00#J 3-ND	RJK2006DPE-00#J 3	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25C: 40A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 59 mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V Power Dissipation (Max): 100W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 4-LDPAK Package / Case: SC-83	1000 Order	1+: $0
FL6L52030L-ND	FL6L52030L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Rds On (Max) @ Id, Vgs: 420 mOhm @ 500mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 1mA Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 540mW (Ta) Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSSMini6-F1 Package / Case: 6-SMD, Flat Leads	1000 Order	10000+: $0.1429
RJK0452DPB-00#J 5TR-ND	RJK0452DPB-00#J 5	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 45A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 22.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4030pF @ 10V Power Dissipation (Max): 55W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	1000 Order	1+: $0
RJK6015DPM-00#T 1-ND	RJK6015DPM-00#T 1	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 21A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 360 mOhm @ 10.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PFM Package / Case: TO-3PFM, SC-93-3	1000 Order	1+: $0
HAT2168H-EL-ETR -ND	HAT2168H-EL-E	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 30A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V Power Dissipation (Max): 15W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK Package / Case: SC-100, SOT-669	5000 Order	--
RJK5030DPP-M0#T 2-ND	RJK5030DPP-M0#T 2	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 25V Power Dissipation (Max): 28.5W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FL Package / Case: TO-220-3 Full Pack	1000 Order	1775+: $0.5935
RJK1001DPP-E0#T 2-ND	RJK1001DPP-E0#T 2	Renesas Electronics America	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 80A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 147nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 10V Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220FP Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
MTM862270LBFTR- ND	MTM862270LBF	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 2.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 105 mOhm @ 1A, 4V Vgs(th) (Max) @ Id: 1.3V @ 1mA Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V Power Dissipation (Max): 540mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: WSSMini6-F1 Package / Case: 6-SMD, Flat Leads	10000 Order	10000+: $0.0883
FK8V03020L-ND	FK8V03020L	Panasonic Electronic Components	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 33V Current - Continuous Drain (Id) @ 25C: 14A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 3V @ 2.2mA Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs (Max): 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: WMini8-F1 Package / Case: 8-SMD, Flat Lead	1000 Order	3000+: $0.3413
NP180N055TUK-E1 -AY-ND	NP180N055TUK-E1 -AY	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 90A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 294nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 16050pF @ 25V Power Dissipation (Max): 1.8W (Ta), 348W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263-7 Package / Case: TO-263-7, DPak (6 Leads + Tab)	1000 Order	1+: $0
NP84N075KUE-E1- AY-ND	NP84N075KUE-E1- AY	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25C: 84A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 42A, 10V Vgs(th) (Max) @ Id: 4V @ 250A Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	1+: $0
2SK3811-ZP-E1-A YTR-ND	2SK3811-ZP-E1-A Y	Renesas Electronics America	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 55A, 10V Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 17700pF @ 10V Power Dissipation (Max): 1.5W (Ta), 213W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TO-263 Package / Case: TO-263-3, DPak (2 Leads + Tab), TO-263AB	1000 Order	--

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