HAT2168H-EL-E Discrete Semiconductor Products

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The HAT2168H-EL-E is a single-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is designed to be used in power supply management, power switch and DC-DC conversion applications. This small and easy to use integrated circuit transistor is an important component in many electronic systems.

A MOSFET is a type of field-effect transistor, consisting of two conducting layers between which an electric field is established by applying a voltage to the gate terminal. A third layer, the source, sits between the two layers. When a voltage is applied to the gate this can control the current flowing between the source and the drain of the transistor. This means that it can act as an amplifier, so that a small input signal can be manipulated to create a larger effect.

The HAT2168H-EL-E is a N-channel MOSFET with a built-in 24V gate-to-source voltage rating. It has a maximum drain current of 3A, a drain-source voltage of 50V and a gate threshold voltage of 1.5V. This makes it ideal for applications requiring high output current and low gate drive requirements. It is capable of switching up to 50V at up to 3A making it a suitable solution for simple high side switch and low side switch applications. The HAT2168H-EL-E also has a built-in over-current protection, making it a cost effective and reliable solution for power management and switch applications.

The working principle behind the HAT2168H-EL-E is simple. When a voltage is applied to the gate current will begin to flow between the source and the drain. This current flow is controlled by the voltage applied to the gate, meaning that when the voltage is increased more current will flow. This is what makes it such a useful component for controlling electricity. The current flowing between the source and the drain can be used for switching other components on or off, amplifying a signal, or for many other purposes.

The HAT2168H-EL-E can be used in many different applications, making it one of the most versatile transistors available. It is commonly used in power supply management, DC-DC conversion, power switch and other electronic systems where current needs to be controlled. It is also used in applications such as motor control, audio amplification, smart lighting, and home automation. With its built-in gate-source voltage rating of 24V, it can handle high voltage applications with ease.

The HAT2168H-EL-E is a high-performance MOSFET with a low gate drive requirement and high current capacity. It is a single-gate transistor with a built-in 24V rating, maximum drain current of 3A, and drain-source voltage of 50V. This makes it an ideal choice for a wide range of applications, from power supply management to audio amplification. With its built-in over-current protection and low gate drive requirement, the HAT2168H-EL-E is a reliable and cost effective solution for many types of projects.

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