2SK3018T106 Discrete Semiconductor Products

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The 2SK3018T106 is an n-channel enhancement-mode field-effect transistor (FET) ideal for switching and amplification applications. Its small size and high power density make it suitable for use in a wide range of applications. This device is particularly well suited for medium to high power switching applications, due to its low on-resistance and high breakdown voltage. Additionally, its high-power density makes it suitable for automotive, industrial, and power amplification applications.

The 2SK3018T106 consists of single n-channel MOSFET and is typically packaged in a four-terminal TO-252 package. This device employs the advanced parallel-cell structure, which can provide superior switching performance and increase device densities. Its high packing density allows for more circuit functions to be integrated into the same space, leading to less board space, improved circuit board layout and reduced parasitic inductance.

The 2SK3018T106 has a maximum drain current of 40A, drain-source breakdown voltage of 106V and a low on-resistance of 7.5mΩ max. Additionally, its high power rating and low gate capacitances make it ideal for use in high-efficiency power switching applications. It also features a high input impedance, which makes it ideal for low-frequency amplification applications.

The 2SK3018T106 works on the principle of p-channel MOSFET, using a single MOSFET as a switch. The voltage applied to the gate terminal triggers the flow of current from the source to the drain. This device acts as an ideal switch, since when the gate terminal is forward biased, the drain-source junction is completely turned on, which enables the drain current to flow through the MOSFET. In the off state, the MOSFET acts like an open switch, not allowing any current to flow through it.

The 2SK3018T106 can be used in a wide range of applications, including automotive, industrial and commercial, power switching, motor control, communications and power electronics. Additionally, it is suitable for automotive and industrial end applications, such as motor control, switching regulators, motor control and switching applications, where it can provide enhanced performance. Its low on-resistance and high breakdown voltage make it suitable for medium to high power switching applications, where it can provide superior switching performance.

In summary, the 2SK3018T106 is a single n-channel enhancement-mode field-effect transistor (FET) suitable for a variety of applications. It is easy to integrate and can provide superior switching performance, low on-resistance and high breakdown voltage. Its small size and high power density make it appropriate for medium to high power switching applications.

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