2SK3745LS-1E Allicdata Electronics
Allicdata Part #:

2SK3745LS-1EOS-ND

Manufacturer Part#:

2SK3745LS-1E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 1500V 2A TO-220F
More Detail: N-Channel 1500V 2A (Ta) 2W (Ta), 35W (Tc) Through ...
DataSheet: 2SK3745LS-1E datasheet2SK3745LS-1E Datasheet/PDF
Quantity: 639
Stock 639Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F-3FS
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 1500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

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The 2SK3745LS-1E is a single P-channel MOSFET (metal oxide semiconductor field effect transistor) that is used to amplify and switch electronic signals. It is manufactured using a specialized process that creates a low-power, high-performance field-effect transistor (FET). The device is ideal for use in a wide range of applications that require a high level of signal capability, such as radio frequency (RF) amplifiers, signal switching, power supply control, and data acquisition.

The 2SK3745LS-1E’s P-channel research is an enhancement-type FET, which consists of two P-type (positively charged) layers separated by a thin insulating layer. A gate electrode, charged positively, is placed between these two layers. When voltage is applied to the gate electrode, electrons are attracted to the positive gate and form a “channel” of electrons between the P-type layers, allowing current to flow from the source (positive) to the drain (negative) of the FET.

The channel is modulated by the voltage of the gate, thus allowing the 2SK3745LS-1E to act as an amplifier as well as a switch. Depending on the voltage applied to the gate, the channel can be pinched off (fully conductive) or opened (non-conductive). This allows the FET to be used to regulate the current flow in any given circuit.

The 2SK3745LS-1E has many advantages over other types of transistors such as bipolar junction transistors (BJTs) or junction field effect transistors (JFETs). For one, it requires less power to operate in comparison to BJTs and JFETs. Secondly, FETs are better suited for high-frequency applications than BJTs or JFETs. This makes them ideal for RF applications such as radios, TV receivers, and mobile phones where high-speed operation and low power consumption is necessary.

The 2SK3745LS-1E is useful for controlling the current flow in any electronic device and is most commonly used for applications such as RF amplifiers and signal switching. High-performance P-channel FETs such as these are also used in data acquisition and in power supply control circuits. In each instance, the 2SK3745LS-1E helps to ensure accurate signal processing and current control.

The specific data is subject to PDF, and the above content is for reference

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