2SK3313(Q)

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220NIS
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2040pF @ 10V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	620 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	12A (Ta)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Bulk

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2SK3313(Q) Application Field and Working Principle

The 2SK3313 is an N-channel depletion type MOS Field Effect Transistor (FET) known as as a K3313. It is developed by Renesas Electronics Corporation, a world leading supplier of semiconductor and system solutions. The 2SK3313 is designed to minimize on-resistance at high operating voltages and to minimize power loss in low voltage applications. It is fabricated in a small package and can achieve low switching times, making it suitable for a wide range of applications. This article will discuss the application field and working principle of 2SK3313(Q).The 2SK3313(Q) is a depletion type MOSFET ideal for low voltage applications such as DC-DC converter, switching power supplies and direct current (DC) motor drives. Furthermore, this device is well-suited to full-bridge, switching voltage regulator and half-bridge applications. It is also used for high-efficiency, high-reliability switching power supply where a low saturation voltage is required, and for integrated low-voltage pulse width modulation (PWM) motor drivers. 2SK3313(Q) P-channel MOS transistors are also commonly used in high-frequency switching applications such as television (TV) sets and computer monitors. This device supports high power density, low switching noise and low power loss.The 2SK3313(Q) is a vertical DMOS structure, wherein an N-channel structure with low on-resistance and high operating voltage is formed inside the epoxy resin package. The high speed switching capability of 2SK3313(Q) is due to the vertical DMOS structure which is characterized by low channel resistance and fast switching time. The 2SK3313(Q) features ultra-low on-resistance and high heating value, which makes it suitable for high power applications. Furthermore, the device is protected against static discharge (ESD) and exhibits a fast transient turn-off time.The 2SK3313(Q) is operated by controlling the gate voltage. By increasing the positive voltage applied to the gate (up to the specified drain-to-source voltage) of the device,the potential of the channel will be reduced,The electrons carriers (in this case the electrons in the channel) will be attracted magnetically towards the gate and thus increase theconcentration of electrons in the channel, allowing conductionthrough the N-type channel to occur. Conversely, when the gate voltage is decreased below the threshold voltage, thechannels electrons will be scattered, and no conduction will occur through the device.Generally speaking, the 2SK3313(Q) is an efficient andreliable power transistor for a wide range of applications. It supports low-voltage operation, and is highly integrated and easy to use. Its features, such as low on-resistance and low conversion loss, make it suitable for high-efficiency switching power supply applications and it offers the flexibility to configure any circuit configuration. The 2SK3313(Q) is widely used to optimize DC-DC converter performance, reduce power consumption, and improve overall system reliability.

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