2SK3745LS Allicdata Electronics
Allicdata Part #:

2SK3745LS-ND

Manufacturer Part#:

2SK3745LS

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 1500V 2A TO-220FI
More Detail: N-Channel 1500V 2A (Ta) 2W (Ta), 35W (Tc) Through ...
DataSheet: 2SK3745LS datasheet2SK3745LS Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FI(LS)
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 37.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 13 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 1500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The 2SK3745LS is a single-gate Field-Effect Transistor (FET) that belongs to the classic line of MOSFETs. It is distinguished from other FETs, especially MOSFETs, for its low on-state resistance, as well as its low gate-charge capacity. This makes it an ideal choice for applications requiring a high level of switching speed or precision.

The 2SK3745LS is an N-channel MOSFET (metal-oxide-semiconductor FET) that operates with a single switch instead of the two characteristic of traditional, dual-gate MOSFETs. This provides the device with significantly lower power consumption, as well as greater speed and control.

The device features a number of features that make it especially well-suited for a variety of applications. It has an excellent Drain-Source On-State resistance of 0.6 ohms. This can be adjusted via the gate voltage, allowing users to adjust the on-state resistance of the device based on the specific needs of the application.

The device also features a low gate-charge capacity of just 20 nC. This is a significant advantage over dual-gate MOSFETs, which may require much more gate charge in order to switch. This significantly reduces the overall power consumption of the device, since less power is consumed when switching the device on and off.

Overall, the 2SK3745LS is an incredibly versatile and powerful device. Its low on-state resistance and low gate-charge capacity make it ideal for applications requiring fast switching times or precise control. Additionally, its simple single-gate construction makes it possible for users to adjust the on-state resistance of the device without altering the device design. All of these features make the 2SK3745LS an ideal choice for a wide range of applications, including industrial and consumer electronics, power electronics, and even communication systems.

The specific data is subject to PDF, and the above content is for reference

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