2SK3821-DL-E

Vgs(th) (Max) @ Id:	2.6V @ 1mA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	SMP-FD
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.65W (Ta), 65W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4200pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	73nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	33 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	40A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Item： 2SK3821-DL-E
The 2SK3821-DL-E is a single N-Channel MOSFET, or simply FET, made by several manufacturers. These transistors are capable of switching relatively high voltages and currents, due to their design and manufacture. As such, they are found in a wide variety of applications and devices, and while they are not typically used to control high voltages and currents, they can often offer substantial savings in terms of cost and area when compared to alternatives. Understanding how a 2SK3821-DL-E works is essential to correctly implement it and to understand its limitations. In this guide, we will look at the application fields for this device and its working principle.

Application Fields and Uses of the 2SK3821-DL-E

The 2SK3821-DL-E can be found in many applications, particularly in various computers, as they are typically used to switch voltages and current. Specifically, they are frequently employed in power regulation and high-end audio systems. In addition, they are often used in medical equipment, such as MRI and x-ray machines, and in industrial controls. More specifically, the 2SK3821-DL-E is often used in automobiles. It can be found in anti-lock braking systems, airbags, and injectors. It is also used in communication systems, often as the means of controlling the flow of signals. Additionally, they are used in motor drives and in switched-mode power supplies, which are often used to power mobile phones, as well as most other devices that require power from a battery.

Working Principle of the 2SK3821-DL-E

The 2SK3821-DL-E transistor is based on a common FET (Field-Effect Transistor) design. FETs are unipolar devices, meaning that they can switch a signal between two terminals without the need for additional control circuits or power supplies. This allows for very efficient and fast switching.The 2SK3821-DL-E is an N-channel MOSFET, meaning that its two transistors, or channels, can be used to control either one of two functions. When the signal voltage is applied to the Gate of the transistor, it is then transmitted to the source and the drain. This then forms an electrical junction between the source and the drain which induces current flow across the device. The current is then further amplified and regulated by a second transistor, known as the gate. This second transistor is connected to the source and drain, and the signal is then passed on to the output of the device. As the output is regulated, the device can be used to switch between several different voltages and current levels. By controlling the amount of current that flows through the 2SK3821-DL-E, it is possible to switch between very high levels of voltage and current, which can come from a variety of different sources. This makes the 2SK3821-DL-E particularly useful for a wide range of applications, from audio systems to motor drives.

Conclusion

The 2SK3821-DL-E is a very versatile and useful single channel MOSFET that can be employed in a variety of applications. It is typically used to switch between very high voltages and currents and can be found in a wide range of electronics, from automobiles to medical equipment. Its working principle is based on two transistors, one of which is connected to the source and the drain and the other of which is connected to the gate, regulating the current that passes through the device.

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