Allicdata Part #: | 2SK3826-ND |
Manufacturer Part#: |
2SK3826 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 26A TO-220 |
More Detail: | N-Channel 100V 26A (Ta) 1.75W (Ta), 45W (Tc) Throu... |
DataSheet: | 2SK3826 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 1.75W (Ta), 45W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
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2SK3826 Application Field and Working Principle
The 2SK3826 is an enhancement mode N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in switching applications. It is designed with a low on resistance and a high breakdown voltage. With its power dissipation rating at 5.25 watts, the MOSFET is suitable for high voltage and load current applications. Because of its enhanced on-state current handling capabilities, the 2SK3826 is mainly utilized in high current gate drive and switching applications.
The working principle of the MOSFET is similar to that of a vacuum tube. It uses a single gate to control the current flowing between two terminals. When the gate voltage is changed, the current flowing through the channel is changed accordingly. The MOSFET has an insulated gate that can be used to control the current without the use of an external power source. This allows for very low power dissipation and higher efficiency.
The 2SK3826 MOSFET has a maximum gate to source voltage rating of ±20V, a maximum gate to drain (or source to drain) voltage of 20V and a maximum power dissipation of 5.25W. It can handle a maximum drain current of 2.85A at a drain to source voltage of 20V. Its internal transconductance is 8 mS at 10V.
The 2SK3826 MOSFET can be used in a variety of application fields such as motor control, DC-DC converters, relay drivers, switching regulators and power amplifiers. It can also be used to control electric current in highly automated systems. Due to its low on resistance and ability to handle high currents, the MOSFET can be used to create more efficient circuits with fewer components.
In conclusion, the 2SK3826 MOSFET provides a efficient, cost-effective solution for high power applications. It has a low on resistance and can handle relatively high drain currents at the same time, making it a perfect choice for high current switching applications. It also has good thermal performance and is perfect for applications that require high switching speeds. With its wide range of applications, the 2SK3826 MOSFET is sure to be a great option for any power application.
The specific data is subject to PDF, and the above content is for reference
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2SK3820-DL-1E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 26AN-Cha... |
2SK3430-AZ | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO220... |
2SK3430-Z-E1-AZ | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 80A TO220... |
2SK3431-AZ | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 83A TO220... |
2SK3431-Z-E1-AZ | Renesas Elec... | 0.0 $ | 1000 | MOSFET N-CH 40V 83A TO220... |
2SK3816-DL-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 40A SMP-F... |
2SK3817-DL-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 60V 60A SMP-F... |
2SK3820-DL-E | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 26A SMP-... |
2SK3821-DL-E | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 40A SMP-... |
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