2SK3943-ZP-E1-AY

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 2SK3943-ZP-E1-AY is a single-terminal enhancement-mode silicon insulated gate field-effect transistor (FET). As with all FETs, the 2SK3943-ZP-E1-AY has three primary leads—gate, drain and source—which control the electrical characteristics of the device. Applications of the 2SK3943-ZP-E1-AY include power switching and linear amplifier circuits, such as switch-mode power supplies, digital-to-analog converters and motor drives.

The 2SK3943-ZP-E1-AY is based on a vertical channel junction-gate-field-effect structure (JGFET). The device is designed to provide on-state current levels up to 1A and off-state leakage current levels as low as 3.2 µA. The maximum drain-source drain-voltage (Vds) is 75V and the gate-source voltage (Vgs) is 10V. In addition, this device is rated for a junction temperature of 175°C.

As with all FETs, the 2SK3943-ZP-E1-AY has the two basic operating modes—enhancement (also known as depletion) and depletion. The nature of the channel of the device determines the mode of operation. In the case of the 2SK3943-ZP-E1-AY, it is an enhancement-mode device, meaning that its channel is completely isolated from the gate voltage until the gate voltage is of a suitable value. This means that the channel remains off until the egg voltage is sufficient to cause the electrons in the channel to form an inversion layer and an attractive force is created between the gate and the inversion layer, which then allows for the current to flow.

The 2SK3943-ZP-E1-AY is a highly efficient transistor, operating at drain-source voltages up to 75V, gate-source voltages of up to 10V, and junction temperatures of up to 175°C. Its high-efficiency design allows it to deliver low power consumption, a low threshold voltage, and long-term reliability. In addition, this device is rated for operating at frequencies of up to 1MHz, making it suitable for a wide range of applications.

The 2SK3943-ZP-E1-AY is ideally suited for use as a power switch in switch-mode power supplies, digital-to-analog converters and motor drives. As a power switch, the device provides a low on-state current level and a low off-state leakage current, allowing for effective power conservation and low energy consumption. In addition, the device is designed to operate at high frequencies, making it well-suited for switching applications that require a large number of pulses in a relatively short period of time.

Overall, the 2SK3943-ZP-E1-AY is a highly efficient single-terminal enhancement-mode silicon insulated gate field-effect transistor that is well-suited for use in power switching and linear amplifier circuits. It provides a low on-state current level, a low off-state leakage current, and a high operating frequency, making it well-suited for use in a wide range of applications. It is therefore an ideal choice for use in switch-mode power supplies, digital-to-analog converters and motor drives.

The specific data is subject to PDF, and the above content is for reference