Allicdata Part #: | AO4419L-ND |
Manufacturer Part#: |
AO4419L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET P-CH 30V 9.7A 8SOIC |
More Detail: | P-Channel 30V 9.7A (Ta) 3.1W (Ta) Surface Mount 8-... |
DataSheet: | AO4419L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 9.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.7A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The AO4419L is an advanced transistor technology. This technology enables engineers to design and create electronic components with high power capabilities. This technology is based on a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) type of transistor, which is capable of producing high frequencies with low power consumption and greater energy efficiency. The AO4419L is usually used in applications that require higher power management, such as power supply and power management systems.
The AO4419L MOSFET is a single transistor and it utilizes the traditional four-layer MOSFET structure. Its gate terminal contains a gate-drain connection, which forms the basis for the field-effect relationships inside the device. The source terminal, on the other hand, has an additional gate-source connection, which forms the basis for potential transfer from the gate to the source and from the source to the gate. The lower resistance provides higher efficiency and improved performance when compared to other transistor types.
The working principle of AO4419L is based on the voltage, resistance, and capacitance of the device. The higher the voltage, the higher the resistance, and the higher the capacitance. This behavior is referred to as the V-R-C effects, which govern the operations of the AO4419L. When an external signal is applied to the gate, it will cause a voltage change in the device. This voltage change will be limited by the resistors that are connected between the source and the gate. This will then cause the capacitance of the device to change, which in turn will cause the current to change.
When there is no external signal applied to the gate, the capacitance of the device will be in equilibrium with the resistors, and the current will remain at the same level. This stability allows the device to perform its functions effectively under normal operating conditions. In addition, this stability also provides the capability to use less energy compared to a traditional power transistor, making it more efficient and economical.
The AO4419L is often utilized in areas where power control and management systems are being implemented. Its high power-handling capabilities and the fact that it is a reliable and resilient device, makes it an ideal choice for managing and controlling power in a wide variety of applications such as industrial, automotive and consumer electronics.
In addition, the AO4419L is also used in communication systems where its high power capabilities mean that it can handle high frequencies with low power loss and greater efficiency. The AO4419L is particularly popular in applications such as television, radio and other electronic devices that require a high frequency signal.
The AO4419L is a powerful and reliable transistor that provides excellent performance and energy efficiency. Its high power handling and resilience make it a great choice for power control and management systems. Its high frequency capability allows it to be used in communication systems, making it a popular choice for television, radio, and other consumer electronics devices. Its low power consumption makes it an economical choice for power supply and power management systems, making it an ideal choice for engineers who need to design and create advanced power devices.
The specific data is subject to PDF, and the above content is for reference
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