AO4496 Allicdata Electronics
Allicdata Part #:

785-1292-2-ND

Manufacturer Part#:

AO4496

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N CH 30V 10A 8SOIC
More Detail: N-Channel 30V 10A (Ta) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4496 datasheetAO4496 Datasheet/PDF
Quantity: 490
Stock 490Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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AO4496 is an enhancement-mode Gallium Nitride semiconductor field-effect transistor (GaN FET) from Alpha and Omega. It has a high drain-source breakdown voltage and an impressive continuous drain current of 88A making it well-suited for a variety of power-management applications. In this article, we will discuss the application field and working principle of the AO4496.

The AO4496 has a very low on-resistance of only 8.5mΩ, making it ideal for high-current, high-efficiency applications such as motor control, home appliance control, DC/DC converters and other power switching applications. It is also well-suited for automotive applications, due to its robustness against temperatures and higher breakdown voltage. AO4496 can also be used as a switch in a GaN-based half-bridge or full-bridge circuit, making it perfect for high-current and high-frequency applications such as motor control, lighting or DC-DC converters. It is designed to work with an operating voltage range of 5 V to 45 V, and the current carrying capacity is 88 Amps.

Now, let’s focus on the working principle of AO4496. It is a common-source transistor, meaning that the voltage between Source and Drain is controlled by the voltage applied to the Gate. When no voltage is applied to the Gate, the transistor is in an Off state. The resistance between Source and Drain is very high, resulting in almost no current flowing through the transistor. When a positive voltage is applied to the Gate, the transistor is in an On state. The resistance between Source and Drain is reduced, allowing current to flow through the transistor.

The AO4496 GaN FET is designed to operate at high frequencies and with low switching losses. This allows it to achieve higher efficiency and lower levels of Total harmonic distortion (THD) in applications such as power management, motor control and lighting control. The transistor is also designed to operate in high temperature environments with a maximum junction temperature of 175°C, making it suitable for under-the-hood automobile applications.

To summarise, AO4496 is a high-current, high-efficiency power transistor with a maximum drain current of 88 Amps and an on-resistance of 8.5 mΩ. It is well-suited for applications such as motor control, lighting control and DC/DC converters due to its capability of operating at high frequency and with low switching losses. Additionally, it is also suitable for automotive applications due to its excellent temperature and breakdown voltage performance. It is a common-Source transistor which is switched On and Off by the voltage applied to the Gate.

The specific data is subject to PDF, and the above content is for reference

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