AO4485 Allicdata Electronics
Allicdata Part #:

785-1551-2-ND

Manufacturer Part#:

AO4485

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 40V 10A 8SOIC
More Detail: P-Channel 40V 10A (Ta) 1.7W (Ta) Surface Mount 8-S...
DataSheet: AO4485 datasheetAO4485 Datasheet/PDF
Quantity: 12000
Stock 12000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.7W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 15 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The AO4485 is a relatively new voltage-controlled P-Channel MOS field-effect transistor (MOSFET) produced by Alpha bs-and-dos Corporation. This particular MOSFET was specifically designed to meet the low on-resistance requirements of light load switching applications and provides two distinct advantages when compared to traditional MOSFETs. The first is the slightly higher drive current capabilities and the second is the reduced switching time.

The AO4485 utilizes a single P-channel MOSFET in a relatively small form factor, allowing for a much higher degree of device integration into designs. This is possible due to the use of an optimized P-channel DMOS process and silicon substrate design. As a result, the AO4485 has an exceptionally low on-resistance when compared to other similar products. As well, the low channel-to-source capacitance of this MOSFET helps to reduce switching losses, thus making it suitable for high-speed applications.

The AO4485 is particularly well-suited for use in a variety of electronic devices such as automotive, military, industrial and consumer applications. In terms of automotive applications, this MOSFET can be used for fuel injector control, integrated injector control, motor control and engine management. For military applications, its low on-resistance and high switching speeds make it well suited for high-speed data acquisition applications.

In the industrial market, this MOSFET is often used for switch mode power converters, low-power motor control, and portable equipment. In terms of consumer applications, this MOSFET can be used for DC-DC converters, lighting applications, portable battery-powered devices, and smart phone charging.

The working principle of the AO4485 is relatively straightforward. When a positive voltage is applied to the Gate of the device, it creates an inversion layer in its semiconductor channel, which allows current to flow through to the Drain. As the voltage applied to the Gate continues to increase, the current flow through the device increases accordingly. Inversely, when the voltage applied to the Gate decreases, the current flow through the device decreases as well.

In summary, the AO4485 is a unique P-Channel MOSFET designed to meet the low on-resistance requirements of light load switching applications. This MOSFET can be found in a diverse range of applications, including automotive, military, industrial and consumer applications. Additionally, the AO4485 utilizes a single P-channel MOSFET in a relatively small form factor to provide high integration capabilities, low switching losses and high switching speeds. Finally, the working principle of this device is quite straightforward, wherein a positive voltage applied to the Gate of the device creates an inversion layer in the semiconductor channel that allows current to flow from the source to the drain, depending on the magnitude of voltage applied to the Gate.

The specific data is subject to PDF, and the above content is for reference

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