AO4488L

Vgs(th) (Max) @ Id:	2.5V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.7W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6800pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	112nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	4.6 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Bulk

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AO4488L Application Field and Working Principle

AO4488L is a single N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET) with low on-resistance and low-threshold voltage for direct drive of small and medium DC motor with sensible current. AO4488L is designed and optimized for low-voltage, low power application. It is suitable for battery power and portable electronic device high-efficiency DC motor applications. This article will discuss the application field and working principle of AO4488L.

Application Field

AO4488L is an ideal MOSFET for the direct drive of small and medium DC motors, especially in battery-powered and portable electronic devices. With the low on-resistance and low threshold voltage, it can drive such motors more efficiently with less heat dissipation. Moreover, AO4488L has excellent switching capability, allowing it to support speeds up to 40KHz with pulse modulation. Moreover, this device can also be used as a non-linearswitchpower supply, such as drain-source feedback. The internal gate-to-source and gate-to-drain capacitances are relatively small, so it has excellent frequency response characteristics, and can be used for high-speed switching circuits. Additionally, it is also used in audio circuit protection, voltage detection, and load isolation. In addition to motor drive applications, AO4488L is also suitable for load switch applications, such as cell phone battery protection, low-noise automotive electronics, and integrated power amplifiers.

Working Principle

AO4488L is a transistor based on metal-oxide-semiconductor field-effect transistor (MOSFET) technology. MOSFET is composed of four filaments, including the gate, the source, the drain, and the body. The gate is insulated from the source and the drain, and is connected to the gate of the control voltage. When the gate voltage is greater than the threshold voltage, the channel between the source and the drain is turned on, allowing current to flow. As the gate voltage increases, the degree of conduction of the channel is stronger.In the AO4488L, the on-resistance is less than 2.4Ω and the drain-to-source saturation voltage is less than 0.2V. The threshold voltage is about 6V. The maximum drain current is 5.2A, which effectively reduces the power loss and heat generation during operation, and thereby increases the efficiency of the motor drive. In addition, it has a fast transition speed, which is suitable for pulse modulation and pulse driving applications.In conclusion, AO4488L is an excellent MOS field-effect transistor for the direct drive of small and medium DC motors. It has a low on-resistance and low threshold voltage, and good regulation and switching capability. It is suitable for battery-powered and portable electronic device DC motor applications. In addition, it is also widely used in audio circuit protection, voltage detection, load isolation and other applications.

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