AO4423L Allicdata Electronics
Allicdata Part #:

785-1751-2-ND

Manufacturer Part#:

AO4423L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET P-CH 30V 17A 8SOIC
More Detail: P-Channel 30V 17A (Ta) 3.1W (Ta) Surface Mount 8-S...
DataSheet: AO4423L datasheetAO4423L Datasheet/PDF
Quantity: 9000
Stock 9000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3033pF @ 15V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 15A, 20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 20V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR) 
Description

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AO4423L is a p-channel enhancement type MOSFET that is designed primarily for low voltage power management applications.

In power management applications, AO4423L is often used to control the power supply to a low voltage circuit or device. The device can also be used for other applications requiring the application of a low voltage or low current gate signal for providing gate drive to an external MOSFET or IGBT. The AO4423L is available in an ultra-small SOT-363 package.

AO4423L operates at a low gate-to-source voltage of 1.8V. The drain current is -1.1A (max) and the drain-source breakdown voltage is -20V (min). The device features low on-resistance (RDS(ON)) of 8mΩ (typ) and high current handling capability. The device is ideal for mobile devices, RF and analog power management applications.

AO4423L Working Principle

AO4423L is an enhancement type MOSFET (metal oxide semiconductor field-effect transistor) with a p-channel structure. When the gate voltage of the device is made more positive than the source voltage, a narrow conducting channel is created between the source and drain when the gate to source voltage is increased, it further depletes the charge carriers from the formed conducting channel thus reducing its resistance. This allows larger current to flow from the drain to source.

The device operates in enhancement mode, which means that it needs an external gate signal to turn it “on”. When a small amount of current is applied to the gate of the device, it is “pulled” inwards creating an electrically conductive channel between the source and the drain. This causes the current to flow freely between the source and drain. However, the flow is only allowed when the gate voltage is greater than the source voltage.

The main advantage of the device is that it can switch very fast and is extremely efficient at conducting low voltage and low power signals. This makes it ideal for usage in small-scale circuits, like cell phones or small battery-powered applications. The device also has a very high current handling capability. These features make the AO4423L an excellent choice for a wide variety of low voltage, low power applications.

Conclusion

The AO4423L is an ideal device for low voltage and low power applications, such as mobile devices, RF and analog power management applications. The device operates at a low gate-to-source voltage of 1.8V, has a low on-resistance of 8mΩ (typ) and a high current handling capability. It features a unique, ultra-small SOT-363 package and is a reliable and easy-to-use device that can be employed in a number of low-power applications.

The specific data is subject to PDF, and the above content is for reference

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