Allicdata Part #: | 785-1237-5-ND |
Manufacturer Part#: |
AOT410L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V 150A TO-220 |
More Detail: | N-Channel 100V 12A (Ta), 150A (Tc) 1.9W (Ta), 333W... |
DataSheet: | AOT410L Datasheet/PDF |
Quantity: | 15668 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta), 333W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7950pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 129nC @ 10V |
Series: | SDMOS™ |
Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 150A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AOT410L is one of the most popular and widely used transistor types in the electronics market today. It is a type of Field Effect Transistor (FET) that is well suited to a variety of applications in components, control systems, and more. In this article, we’ll look at the AOT410L, its application fields and working principle.
What is AOT410L?
AOT410L stands for Alpha Omega Taiwo (AOT) 410L. It is a 4-terminal Enhancement Mode N-Channel transistor, manufactured on a silicon substrate. It features a vertical P-well structure and is designed for high frequency applications. Its design offers excellent performance over a wide range of frequency and temperature ranges. The device also has excellent thermal stability, making it well suitable for applications such as high power radio frequency (RF) amplifiers.
AOT410L Application Fields
The AOT410L is ideally suited to a variety of applications, particularly those that involve low voltage and high frequency operation. It is extremely efficient in amplifying low voltage signals, making it suitable for a variety of applications, including communication systems and control circuitry.
The device is also widely used in a variety of industrial, medical and automotive applications. In industry, it can be used to control high voltage level signals, while in medical applications it can be used to control and monitor pulse oximeters, electrocardiographs and other medical equipment. The AOT410L is also widely used in sophisticated industrial and manufacturing automation applications. It can be used to measure, regulate and control a variety of industrial processes, including those associated with electrical systems.
AOT410L Working Principle
The AOT410L is an enhancement mode Field Effect Transistor (FET) with a vertical P-well structure. It uses a gate voltage to control electron flow between the body and the source and drain regions. When the gate voltage is positive, the transistor is in its “on” state and current can flow through it. By varying the gate voltage, the transistor can be switched from an “on” state to an “off” state, controlling the current flow through the device.
The AOT410L has a low gate capacitance, which makes it suitable for high speed and high frequency operation. This means that the device can switch between its on and off states quickly, making it ideal for devices that require rapid switching or modulation of current. In addition, the device has excellent thermal stability, making it ideal for applications such as high power RF amplifiers.
Conclusion
The AOT410L is an excellent Field Effect Transistor (FET) that is suitable for a wide range of applications. It is designed for high frequency applications and its excellent thermal stability makes it well suited for high power radio frequency (RF) amplifiers. Its low gate capacitance also makes it suitable for high speed and high frequency operation, making it ideal for use in a variety of control and modulating applications. Overall, the AOT410L is an excellent FET that offers excellent performance in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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