Allicdata Part #: | AOT460_002-ND |
Manufacturer Part#: |
AOT460_002 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 60V TO-220 |
More Detail: | N-Channel 60V 85A (Tc) 268W (Tc) Through Hole TO-2... |
DataSheet: | AOT460_002 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 88nC @ 10V |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 268W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4560pF @ 30V |
Vgs (Max): | ±20V |
Series: | -- |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
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The AOT460_002 is a monolithic single transistor-enhancement-mode power MOSFET. It is designed to operate as a switch in a variety of electronic sensing, communications and power management applications. This MOSFET is a silicon-based device that has excellent electrical and mechanical characteristics, and is suitable for high-power, low-impedance designs.
The AOT460_002 is typically used in applications where a low on-resistance and fast switching times are required. It is especially suited for switching and amplification in high-speed communications and audio applications. The device features low on-state resistance and low gate-to-source capacitance, providing superior dynamic performance for fast switching times.
The AOT460_002 uses an enhancement-mode field-effect transistor (FET) as the active device in which the gate voltage is the control element. When the gate voltage is greater than the threshold value (Vth), the output voltage is a function of the applied gate-to-source voltage. The resistance between the gate and the source acts as a switching element in which the gate voltage controls the drain current by varying the resistance between the gate and the source. This kind of switch is known as a level-on MOSFET, which provides better performance and more control of the drain current when compared to bipolar transistors. The device has a very low input capacitance and is ideal for high-speed switching applications.
The device features self-protection features to protect against overvoltage, overcurrent, and reverse-current conditions to ensure safe operation. In addition, the device features a low on-resistance and low gate drive requirements, making it suitable for power and signal applications. The AOT460_002 is available in a variety of package sizes, making it suitable for a wide range of applications. It is a highly reliable and cost-effective solution for switching and power management in consumer electronics, automotive, and other applications.
In summary, the AOT460_002 is a single transistor MOSFET with excellent electrical and mechanical characteristics. It is designed for use in high-speed switching and power management applications, and has a low on-resistance and low gate drive requirements. It features various self-protection features and is available in a variety of package sizes, making it an ideal solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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