AOT470

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AOT470 is a single-channel enhancement mode MOSFET. As a non-blocking MOSFET, it is able to control large currents in low voltage applications and is available as a discrete component or as part of a power management integrated circuit. AOT470 is a versatile MOSFET for Automotive, Industrial, and Consumer electronics applications.

AOT470’s wide range of applications include load switching, regulator networks, logic level switching, power distribution, appliance control, and LED lighting. Its low RDS(on) of up to 50m ohms provides high current capability and low quiescent power. Its enhanced ESD withstand capability ensures the device’s robustness against harsh environmental conditions. AOT470 is designed to perform over a wide operating temperature range of -40° C to +175° C.

AOT470 is an enhancement mode MOSFET. It is a three-terminal diode, connected to the Source, Drain and Gate. The device will start to conduct when the voltage on the Gate increases beyond the threshold voltage of the Drain-Source junction. AOT470 is an enhancement mode device, meaning that the current flow between the Drain and Source is determined by the Gate voltage. The current flow through the Drain-Source is thus proportional to the voltage applied to the Gate.

The working principle of the AOT470 involves thermionic emission. When a certain voltage is applied to the Gate of the MOSFET, electrons from the Source terminal tunnel through the Gate-drain region and are collected at the Drain terminal, thereby establishing a current flow between the Source and Drain. This flow of electrons creates a potential difference between the Drain and Source that is proportional to the voltage applied to the Gate. This effect is known as the drain-source voltage or GS voltage.

In summary, AOT470 is a single-channel enhancement mode MOSFET designed for use in Automotive, Industrial, and Consumer electronics applications. It is capable of controlling large currents in low voltage applications and provides robust operation over a wide temperature range. Its low RDS(on) of up to 50m ohms provides high current capability and low quiescent power, and its enhanced ESD withstand capability ensures device robustness against harsh environmental conditions. Its working principle involves thermionic emission and the current flow between the Drain and Source is proportional to the voltage applied to the Gate.

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