AOT4S60L Allicdata Electronics
Allicdata Part #:

785-1268-5-ND

Manufacturer Part#:

AOT4S60L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 4A TO220
More Detail: N-Channel 600V 4A (Tc) 83W (Tc) Through Hole TO-22...
DataSheet: AOT4S60L datasheetAOT4S60L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 83W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 263pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Series: aMOS™
Rds On (Max) @ Id, Vgs: 900 mOhm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The AOT4S60L is an advanced, low-on-resistance silicon N-channel MOSFET. It is a state-of-the-art device in the vast family of MOSFETs. It has many different applications, depending on the specific context of use. In general, the device has a number of favorable characteristics that make it a viable choice for a wide range of uses. In this article, we will explore the features of the AOT4S60L, as well as its application field and working principle.

The AOT4S60L is an exceptionally fast device, making it suitable for high-frequency switching applications, such as fiberoptic data transmission. It features a very low on-resistance of 1.6 mΩ, allowing it to offer significant power savings, especially in high-efficiency designs. In addition, it supports low conduction losses, making it an ideal device for high-power applications. The MOSFET further benefits from its small footprint and low additional capacitance.

The device is typically employed in a variety of applications that require low on-resistance and fast switching at relatively low gate voltages. These applications can include switching power supplies, motor control, and lighting systems. Similarly, it is commonly used in communication and video equipment, as well as automotive electronics, consumer electronics, and home appliances.

The AOT4S60L has four distinct working modes. In the ohmic (and linear) mode, the FET is operating under a constant voltage, whereby the current passing through the device is proportional to the applied voltage. In the enhancement mode, the FET is operating in a saturated condition, whereby the voltage drop across the device is constant regardless of the applied voltage. In the depletion mode, the FET has no current flowing and the applied voltage must reach a certain threshold before current can pass.

In addition, the MOSFET also offers a hysteretic mode. This mode allows for a large decrease in the applied voltage to be effective in controlling the device’s current value. This sort of operation is particularly useful in applications such as motor, light dimmer, and automotive applications, where voltage spikes and variation of load must be handled with minimal resistance.

The AOT4S60L has several features that make it well-suited to a wide range of tasks. Its low on-resistance, combined with its advanced features such as its hysteretic mode capability, make it a device with great potential for use in both commercial and industrial applications. Moreover, its small footprint and low additional capacitance make it an ideal device for high-performance designs. All in all, the AOT4S60L is a versatile device that offers real advantages for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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