| Allicdata Part #: | AOT418L-ND |
| Manufacturer Part#: |
AOT418L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 100V 9.5A TO220 |
| More Detail: | N-Channel 100V 9.5A (Ta), 105A (Tc) 2.1W (Ta), 333... |
| DataSheet: |  AOT418L Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.1W (Ta), 333W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 5200pF @ 50V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 83nC @ 10V |
| Series: | SDMOS™ |
| Rds On (Max) @ Id, Vgs: | 10 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9.5A (Ta), 105A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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AOT418L is a high-speed and power-efficiency, 4-bins MOSFET from AMSCO, designed for low-voltage applications. The main features of AOT418L are low power consumption, fast switching and low on-resistance. It is commonly used for driver applications in DC-DC power converters and power management systems, as well as in power amplifier stages and in high-side switches.
AOT418L works by utilizing the characteristics of field effect transistors (FETs) in its internal structure. A MOSFET is a type of FET that is used in high power and high voltage applications. FETs are controlled by a gate voltage, which in turn controls the current flow through the device. The gate voltage creates an electric field, which pushes electrons across the device to a source and a drain electrode. The higher the gate voltage, the greater the current flow.
AOT418L is available in a surface-mounted TO-251 package and is ideal for applications where low on-resistance, high speed and low power consumption are needed. It has a P-channel construction and is rated at 4A on-resistance and 4.6A current rating. The on-resistance is typically about 3.4 ohms at +25C for the VGS voltage of 4.5V. Its internal structure includes four MOSFET cells connected in parallel, with a P-channel MOSFET at the source and the drain and each cell having a P-channel MOSFET at the gate.
AOT418L is suitable for applications with supply voltages up to 30 V, and typically has a junction temperature range from -40 to +125 degrees celsius. Its switching speed is approximately 25 nanoseconds and its maximum duty cycle is 95%. The device is TTL/CMOS compatible and is protected against overvoltage and current surges.
In summary, AOT418L is a high-speed, low-power consumption and low-on-resistance MOSFET suitable for DC-DC power converters and power management systems. It has excellent switching speed, low on-resistance and is TTL/CMOS compatible. With its P-channel construction and integrated protection against overvoltage and current surges, AOT418L is a great choice for driver applications.
The specific data is subject to PDF, and the above content is for reference
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