Allicdata Part #: | AOT424-ND |
Manufacturer Part#: |
AOT424 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 110A TO220 |
More Detail: | N-Channel 30V 110A (Tc) 100W (Tc) Through Hole TO-... |
DataSheet: | AOT424 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4400pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOT424 is a depletion type NMOS Field-Effect Transistor (FET) with a Gate–Drain(G-D) breakdown rating of up to 50V. It is a single enhancement mode FET with excellent RDS (ON) values, particularly at higher VDS voltages. It has a low 65mΩ RDS (ON) at 10V and 105mΩ RDS (ON) at 15V, making it an ideal choice for high voltage applications. The low gate capacitance of AOT424 (1.3pF) makes it suitable for high frequency switching.
AOT424 is designed to switch rapidly between two states: on and off. In the on state, the channel between the drain and source is filled with electrons, allowing current to flow through the channel. The gate terminal is used to control the width of the channel. By applying a voltage to the gate, the channel width is narrowed, decreasing the drain-source resistance and increasing the current flow through the transistor. Conversely, when the voltage applied to the gate is decreased, the channel width is widened, leading to a decrease in current flow.
The threshold voltage (or VGS, threshold) is the voltage between the gate and source terminals of a FET which determines whether the FET is in the on or off state. The AOT424 has a threshold voltage of -3V, making it suitable for low voltage applications. It can be driven directly by a low voltage DC signal, providing excellent circuit efficiency.
The maximum continuous power dissipation given by the AOT424 is 30W due to the low RDS (ON). This low resistance makes it suitable for applications that require lower power dissipation, such as small signal audio amplifiers, low power amplifier circuits and DC-to-DC switch mode power supplies. It is also suitable for high voltage applications, such as AC-to-DC power supplies, motor control applications, air conditioners and solar inverters.
Due to its low gate capacitance, the AOT424 is a good choice for high-frequency switching applications. The fast switching speed and low gate capacitance make it a suitable choice for switching circuits and motor control applications. It is also used in high-speed signal processing applications, such as modulators, demodulators and digital-to-analog converters.
The AOT424 is an ideal choice for a wide variety of applications due to its low gate capacitance, fast switching speed, low RDS (ON) and high voltage breakdown rating. It is suitable for both low voltage and high voltage applications and can be used in a variety of different applications, making it a versatile device.
The specific data is subject to PDF, and the above content is for reference
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