Allicdata Part #: | AOT474-ND |
Manufacturer Part#: |
AOT474 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 75V 9A TO220 |
More Detail: | N-Channel 75V 9A (Ta), 127A (Tc) 1.9W (Ta), 417W (... |
DataSheet: | AOT474 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta), 417W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3370pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11.3 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 127A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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When considering the types of transistors available, the AOT474 has distinct features that make it advantageous in a variety of applications. AOT474 is a field-effect transistor (FET) that can be used to drive larger loads with much less power than more traditional transistors. It has a low current leakage threshold, low on-resistance, low gate-source capacitance, and low gate-to-drain capacitance. The AOT474 is a single-gated MOSFET, meaning that the source and drain are connected directly to the gate terminal.
This MOSFET is ideal for low-voltage switching or fan control applications. It can be used to drive motors as well as LEDs, and can be used as an amplifier or sound generator. The AOT474 is able to dissipate power more efficiently due to its higher maximum power rating, allowing it to be used in more powerful applications. The FET is frequently used in low-noise amplifiers due to its reduced gate-source capacitance, ensuring better sound quality.
The key to the operation of the AOT474 lies in its working principle. It is a voltage-controlled device, meaning that a small change in the voltage applied to the gate will result in a large change in the current flowing through the source and drain. The gate terminal forms the controlling element, and it works by controlling the block of electrons (or holes) in the substrate material. The movement of electrons or holes is determined by the voltage applied to the gate terminal. When the applied voltage increases, more electrons or holes are attracted to the gate, resulting in an increase in current flow between the source and drain.
As with all FETs, the AOT474 is a low-power device and is ideal for applications where power conservation is desired. This makes the AOT474 a great choice for applications that require minimal power consumption, such as portable devices or embedded systems. In addition, because the AOT474 is a unipolar device, it can be used in circuits that require high-speed switching. Finally, because the AOT474 can be operated in a linear region, it can also be used as a power amplifier.
The AOT474 is widely used in both digital and analog applications. It can be used in power converters, power supplies, and switch-mode power supplies. It is also used in battery management systems, audio amplifiers, and motor control systems. Moreover, due to its low capacitance and low on-resistance, the AOT474 can also be used for video signal processing and video data transmission.
In summary, the AOT474 is a single-gated MOSFET with a variety of uses. Its low current leakage threshold, low on-resistance, low gate-source capacitance, and low gate-to-drain capacitance make it an ideal choice for applications that require power conservation, high-speed switching, and linear amplification.
The specific data is subject to PDF, and the above content is for reference
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