AOT472 Allicdata Electronics
Allicdata Part #:

AOT472-ND

Manufacturer Part#:

AOT472

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 75V 10A TO220
More Detail: N-Channel 75V 10A (Ta), 140A (Tc) 1.9W (Ta), 417W ...
DataSheet: AOT472 datasheetAOT472 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.9W (Ta), 417W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 140A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The AOT472 is a high frequency, large capacitance N-Channel MOSFET that is designed to give superior performance in the most demanding of applications. It offers superior switching speed, low gate charge, low threshold, and low leakage current for high frequency switching. This makes it a perfect device for use in high-speed, high-voltage applications such as switching power supplies, RF switching, and high voltage DC-DC converters. Additionally, its low voltages and on-resistance make it suitable for high efficiency and power factor correction applications.

The AOT472 is an insulation gate field-effect transistor. Like all MOSFETs it has one gate terminal, one drain terminal and one source terminal to control the flow of current between the drain and the source. This type of FET is composed of an n-channel junction that is operated by a voltage applied to the gate, like a switch. When the voltage is off, the channel is non-conductive and no current can flow. When a positive voltage is applied to the gate, the channel turns on and current can flow from drain to source.

The AOT472 has the following features:

  • High frequency: Due to its high capacitance and lower gate charge, the AOT472 is well-suited for switching applications that require high speed. It can switch signals at frequencies up to several hundred MHz.
  • Low on-resistance: With an on-resistance of less than 1 ohm, it is extremely power efficient, making it ideal for applications that require high power efficiency.
  • Low gate charge: The lower gate charge allows for faster switching speeds and higher frequencies.
  • Low threshold: The low threshold makes it suitable for high efficiency applications.
  • Low leakage current: The low leakage current makes it suitable for high voltage applications such as DC-DC converters.

The AOT472 is typically used in high-speed, high-voltage applications where switching speed and power efficiency are critical. It can be used in a variety of applications, such as switching power supplies, RF switching, and high voltage DC-DC converters. With its high frequency, low on-resistance, low gate charge, low threshold, and low leakage current, it is an ideal device for these types of applications.

In summary, the AOT472 is a high frequency, large capacitance N-Channel MOSFET that is designed to give superior performance in the most demanding of applications. Its features make it suitable for a range of applications that require high speed, high power efficiency, and high efficiency.

The specific data is subject to PDF, and the above content is for reference

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