Allicdata Part #: | AOT482L-ND |
Manufacturer Part#: |
AOT482L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 80V 11A TO220 |
More Detail: | N-Channel 80V 11A (Ta), 105A (Tc) 2.1W (Ta), 333W ... |
DataSheet: | AOT482L Datasheet/PDF |
Quantity: | 1000 |
Series: | SDMOS™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 105A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 7V, 10V |
Rds On (Max) @ Id, Vgs: | 7.2 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 4870pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 2.1W (Ta), 333W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
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AOT482L is a power transistor developed by Alpha & Omega Semiconductors Limited that is specifically designed for use in high performance, high voltage applications. It has a gate controlled by a gate terminal, a source and a drain. The AOT482L is a two-terminal, enhancement mode, insulated gate field-effect transistor (IGFET) that utilizes silicon nanowire arrays as the semiconductor material. It is an n-type device (nMOSFET).
The AOT482L is a very efficient MOSFET which performs very well when used for high voltage applications. Its unique gate control function allows higher switching speeds and lower on-state resistance as well as improved current-handling capability, resulting in improved power efficiency compared to other transistors. Furthermore, its wide voltage range makes it suitable for use in low and medium voltage circuits. Its low input capacitance ensures faster switching speeds, which is often beneficial in applications such as switching DC-DC converters.
The AOT482L is the ideal power transistor for AC/DC converters, DC-DC buck converters, high power converters, and other applications that require high voltage operation. It can also be used in power management and voltage boosting applications. Furthermore, it can be used in motor drives and other power electronic applications that require high current switching. In addition, its high input capacitance allows for fast switching frequencies and makes it suitable for use in high-speed switching circuits.
The AOT482L works by controlling the current flow between the source and the drain through a gate terminal. As voltage is applied to the gate terminal, electrons are either added or removed from the gate-channel region. This changes the resistance between the source and drain, thus controlling the current flow between them. A higher voltage applied to the gate terminal causes the resistance between the source and drain to decrease, allowing an increased current flow. Conversely, a lower voltage applied to the gate terminal causes the resistance between the source and drain to increase, thus reducing the current flow.
In order to maintain the desired current conduction between the source and the drain, the voltage applied to the gate terminal needs to be carefully controlled. The most efficient way of doing this is by utilizing a gate driver to accurately adjust the gate voltage as needed. This helps ensure that the desired amount of current is always present between the source and the drain by converting the low voltage input from the signal source into a higher voltage signal to be applied to the gate terminal.
The AOT482L transistor is heavily used in a wide variety of high power applications where low on-state resistance, fast switching frequencies, and efficient current-handling capability are required. It has proven to be a reliable and cost-effective solution for controlling large currents in higher power systems. With its wide voltage range and rugged design, the AOT482L is an ideal power transistor for many high power applications.
The specific data is subject to PDF, and the above content is for reference
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