Allicdata Part #: | AOT440L-ND |
Manufacturer Part#: |
AOT440L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 40V TO220 |
More Detail: | Through Hole TO-220 |
DataSheet: | AOT440L Datasheet/PDF |
Quantity: | 1000 |
Series: | * |
Packaging: | Tube |
Part Status: | Obsolete |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220 |
Package / Case: | TO-220-3 |
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AOT440L is a new type of field effect transistor that uses a metal-oxide-semiconductor (MOS) structure. This type of transistor was developed by Advanced Technology, Inc. (ATI). It is a single-gate trench MOSFET specifically designed for high voltage applications such as power supplies, motor control, and high-power switching. The AOT440L is the first MOSFET to incorporate an integrated transformer-style body taper, which provides improved noise immunity, low gate drive losses and low leakage current. It also has an integrated metal-oxide-semiconductor gate to reduce the output capacitance.
AOT440L\'s metal-oxide-semiconductor structure allows it to be used in a wide range of applications. The metal-oxide-semiconductor gate provides high cutoff frequency, allowing the transistor to be used in fast switching applications. The low gate drive losses make it suitable for applications that require low power dissipation. The low gate drain losses also make it suitable for applications that require low voltage drops.
The AOT440L\'s main application is in high voltage applications, including power supplies, motor control, and high power switching. It is particularly suitable for applications that require low power losses, low noise, and high-frequency switching. It is particularly suitable for the high power applications used in the automotive industry. Due to its low gate to drain losses, it is suitable for applications that require low voltage drop.
The working principle of AOT440L is fairly simple. The bipolar junction transistor is composed of three terminals, the source, the drain, and the gate. With the help of the gating voltage, electric charge carriers such as electrons or holes are created in the channel between the source and the drain, which can then move freely between the two terminal points. This flow of electric charge is known as current and the current is what powers the device.
The AOT440L has an integrated transformer-style body taper that allows for improved noise immunity and low gate drive losses. It also has an integrated gate oxide to reduce output capacitance. The gate oxide also reduces gate oxide electric charge that causes hot-carrier effects. This helps reduce gate oxide breakdown voltage and leakage current. The integrated transformer-style body taper also reduces sensitivity to electrostatic discharge.
The AOT440L is an advanced, high voltage MOSFET suitable for applications in the automotive, computing, and industrial industries. It offers low power losses, low noise, and high frequency switching, making it an ideal choice for many applications. It operates on the same principles as other transistors, but its advanced features allow it to better handle high voltage applications without sacrificing performance. In addition, its integrated body taper technology allows it to provide improved noise immunity and low gate drive, making it suitable for applications that have low voltage drops.
The specific data is subject to PDF, and the above content is for reference
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AOT416L_001 | Alpha & ... | 0.0 $ | 1000 | MOSFET N-CH 100V TO220Thr... |
AOT440L | Alpha & ... | -- | 1000 | MOSFET N-CH 40V TO220Thro... |
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AOT462_001 | Alpha & ... | 0.0 $ | 1000 | MOSFET N-CH 60V TO220Thro... |
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