AOT474_002 Allicdata Electronics
Allicdata Part #:

AOT474_002-ND

Manufacturer Part#:

AOT474_002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 75V 9A TO220
More Detail: N-Channel 75V 9A (Ta), 127A (Tc) 1.9W (Ta), 417W (...
DataSheet: AOT474_002 datasheetAOT474_002 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.9W (Ta), 417W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3370pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 11.3 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 127A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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AOT got its name from Alpha and Omega Semiconductor, which is a designer and manufacturer of cutting edge power management and efficient system solutions. The AOT474_002 is a power MOSFET (metal-oxide-semiconductor field effect transistor), which is a type of transistor used to control and switch electric currents. It has a wide range of uses in power supply, computer, automotive, and medical devices.

The AOT474_002 is a single N-channel MOSFET, meaning it has one gate electrode that controls the switching of the entire device. It is a majority-carrier device, meaning it uses both electrons and holes as the conducting part of the device. In comparison, a standard transistor is a minority-carrier device that only uses electrons or holes as the conducting part. The AOT474_002 also has an integrated gate-driver circuit that allows it to be easily switched with a logic signal. The device is designed to handle up to 40A of drain current with a gate voltage of 10V, and a maximum drain-source voltage of 20V.

The AOT474_002 has many applications in low-current and low-voltage systems, such as in power supplies, solar power conversion, and LED lighting systems. It is also used in more demanding applications, such as motor control, high-speed switching, and battery management systems. The device is highly efficient and has a very low on-state resistance, making it optimal for low-power applications. The AOT474_002 has an operational temperature range of -55°C to +175°C, making it suitable for use in demanding automotive applications.

The AOT474_002 works by allowing current to flow from the drain to the source when a voltage is applied to the gate. The device is built with a P-channel MOSFET and a N-channel MOSFET, which are interconnected. When the gate voltage is increased, the P-channel MOSFET conducts, while the N-channel MOSFET turns off. This creates a path for electrons to flow from the drain to the source. When the gate voltage is decreased, the P-channel MOSFET turns off, and the N-channel MOSFET conducts, creating a leak path for the electrons to flow from the source to the drain. Thus, the AOT474_002 can be used to control the flow of current.

The AOT474_002 is a highly efficient and reliable power MOSFET that can be used in a wide range of applications. Its integrated gate-driver circuit allows it to be easily controlled with a logic signal, making it ideal for low-power applications. It is also suitable for use in demanding automotive applications due to its wide operational temperature range. With its low on-state resistance, high efficiency, and wide range of uses, the AOT474_002 is an ideal choice for low-power systems.

The specific data is subject to PDF, and the above content is for reference

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