Allicdata Part #: | 785-1515-5-ND |
Manufacturer Part#: |
AOT42S60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 39A TO220 |
More Detail: | N-Channel 600V 37A (Tc) 417W (Tc) Through Hole TO-... |
DataSheet: | AOT42S60L Datasheet/PDF |
Quantity: | 1366 |
Vgs(th) (Max) @ Id: | 3.8V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 417W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2154pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | aMOS™ |
Rds On (Max) @ Id, Vgs: | 99 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AOT42S60L is a single N-Channel Enhancement Mode Field Effect Transistor (FET) that offers superior performance levels when compared to the more traditional transistor types. It is often used in applications where high speed switching, low noise, and very low power consumption are of high priority, such as in power management, data acquisition, and wireless communication systems.
The AOT42S60L is comprised of a specially designed silicon die that is connected to a package that contains the gate, drain, and source electrodes. The silicon die is embedded within an insulating layer to protect it from moisture, dust, and other environmental factors that could cause damage to the device.
The transconductance of the device is the main factor that influences its performance, as it is closely related to the FET\'s switching speed. The AOT42S60L has a transconductance of 2700 µS and a gate leakage current of 100 nA, which provides superior switching speeds and low on-state resistance. This makes the device ideal for low leak, low noise applications.
The working principle is relatively straightforward and simple. When a voltage is applied to the gate, it pushes the electrons inwards to the drain junction, creating a channel. This channel increases the current that can flow through it, making it an on state. When the voltage is removed from the gate, the electrons are pushed outwards, thus blocking the current flow, and making the device an off state.
The device is also capable of being used in both inverting and non-inverting amplifier circuits, making it a versatile option for various electronic circuits. It can also be used for digital logic circuits due to its low on-resistance, fast switching time, and low turn-on and turn-off times.
The wide variety of applications for the AOT42S60L makes it a great option for both industrial and consumer applications. It can be used in telecommunication systems, industrial control circuits, automotive electronics, and many other areas. Its versatility makes it a suitable option for both prototyping and production circuits.
Overall, the AOT42S60L is an ideal choice for applications that require switching speed, low power consumption, and low noise. Its superior performance and low cost make it an excellent choice for most applications. With its wide range of uses, it is no wonder why the AOT42S60L is one of the most popular single N-Channel Enhanced Mode FETs on the market.
The specific data is subject to PDF, and the above content is for reference
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AOT440L | Alpha & ... | -- | 1000 | MOSFET N-CH 40V TO220Thro... |
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