AOTF11S60_900

Series:	--
Part Status:	Last Time Buy
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C:	--
Drive Voltage (Max Rds On, Min Rds On):	--
Rds On (Max) @ Id, Vgs:	--
Vgs(th) (Max) @ Id:	--
Vgs (Max):	--
FET Feature:	--
Power Dissipation (Max):	--
Operating Temperature:	--
Mounting Type:	--
Supplier Device Package:	--
Package / Case:	--

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AOTF11S60_900 is a standard single-channel MOSFET (metal-oxide-semiconductor field-effect transistor) of the "Super" family. This MOSFET is one of the most widely used devices in the electronic industry. As an important switching device, AOTF11S60_900 belongs to the discrete components of MOSFETs, and its structure and operating principle is in line with the general characteristics of the "Super" family MOSFETs.The AOTF11S60_900 is based on a vertical double-diffused MOS (VDMOS) structure. In this structure type, a polysilicon layer is used to form the NMOS part at the bottom, an oxide layer and a connected pair of silicon layers are used to form the vertical structure, and a second diffusion of polysilicon material is used to form the body contact layer. This structure enables higher transconductance and voltage breaking capacity in the AOTF11S60_900, which allows for improved performance of the device.Compared to the traditional field-effect transistor (FET) technology, the double-diffused MOS (DMOS) structure of the AOTF11S60_900 allows the device to achieve far lower on-state resistance and higher current output. This is due to the added features in the VDMOS structure, such as the layered stack of silicon and oxide layers which improves device stability and efficiency. By adding more layers to the stack design, the AOTF11S60_900 is able to support a wider range of processes and achieve a greater current output than other FETs.When the gate (G) of the AOTF11S60_900 is at a higher voltage than its source (S), an increase in channel current occurs. This is known as the "enhancement channel" state. When the G is at a lower voltage than the S, the device is cut-off and the channel current is reduced. This is known as the "depletion channel" state. The AOTF11S60_900 also features a "triode" state, where the gate voltage is equal to the source voltage, allowing the device to operate at a fixed conductance level. Thus, the source-drain current can be varied through an external voltage source applied to the gate.In addition, the AOTF11S60_900 is a "switching FET" which allows for a wide range of switching responses. When compared to other FETs, the AOTF11S60_900 is capable of producing higher power densities and higher output currents. This makes the device ideal for a range of switching applications, such as switching power supplies, PWM (pulse-width modulation) controllers, and battery charging systems.The AOTF11S60_900 is also well suited for power amplification, as it is capable of producing significantly higher current densities compared to other FETs. This makes the device attractive for power amplifiers and power switching applications, such as motor control and power supplies. Finally, the device is capable of withstanding extreme temperatures, making it suitable for more demanding applications, such as medical equipment and automotive systems.To conclude, the AOTF11S60_900 is a standard single-channel MOSFET which features a VDMOS structure. This allows the device to achieve significantly lower on-state resistances, higher current outputs, and higher power densities compared to other FETs. In addition, the AOTF11S60_900 also features a wide range of switching responses and has the ability to tolerate high temperatures, making it suitable for a variety of applications, such as power amplification, power switching, and battery charging systems.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description