Allicdata Part #: | AOTF12N50-ND |
Manufacturer Part#: |
AOTF12N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 500V 12A TO220F |
More Detail: | N-Channel 500V 12A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | AOTF12N50 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1633pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AOTF12N50 is a power metal-oxide-semiconductor field-effect transistor (MOSFET) designed for a variety of applications. The AOTF12N50 is a single-channel, N-channel MOSFET, featuring low on-resistance (Rds on ) and fast switching speed. It can be used in switching power supply circuits, motor drivers, and other power management systems.
The AOTF12N50 is a three-terminal device, with a gate, drain and source, which also provides very low capacitance between drain and source. It has a maximum drain-source breakdown voltage (BVDSS) of 30V and maximum drain current of 60A. It features an avalanche energy rated at 75mJ, a maximum junction temperature of 150°C, and an RDS(ON) of 0.2 ohms.
The main application area for the AOTF12N50 is in lightweight, adaptive load switching to support high-drain load switching applications such as automotive, consumer, industrial, and medical applications. It can be used to switch a wide variety of loads, such as DC motors, lighting, and LED lighting. In addition, the device can also be used to switch circuits under off-state conditions, with its low Rds on providing minimal conduction loss.
The AOTF12N50 is designed to work in a variety of operating \ conditions, including a wide temperature range (-55°C to 150°C) and a wide voltage range (5V to 10V). It is RoHS compliant and is packaged in a TO-220FL package.
One of the main benefits of the AOTF12N50 is its fast switching speed, allowing high current applications to be performed in a shorter period of time than other transistors. This is made possible by its low input capacitance, which reduces the time necessary for charge and discharge.
The working principle of the AOTF12N50 is based on the MOSFET structure. It is a two-terminal device with a gate, drain and source. When voltage is applied to the gate, the drain-source resistance increases, allowing current to flow through the device. This current is determined by the gate voltage and is related to the number of electrons and holes that exist in the device.
The MOSFET structure of the AOTF12N50 allows for efficient and fast switching, providing multiple applications in electrical and electronic systems. Its low capacitance and high speed switching capability makes it suitable for power supply circuits, motor drivers, and other power management systems.
In addition, the AOTF12N50 is also ideal for use in applications involving reducing conduction losses, such as off-state switching. Its low gate charge, low gate lag, and low input capacitance all play a role in reducing losses during off-state switching.
The AOTF12N50 is a power MOSFET that is suitable for a wide range of applications, from automotive and consumer products to industrial and medical equipment. Its fast switching speed, low on-resistance and low capacitance make it an ideal choice for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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