Allicdata Part #: | AOTF18N65L-ND |
Manufacturer Part#: |
AOTF18N65L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 18A TO220F |
More Detail: | N-Channel 650V 18A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | AOTF18N65L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 390 mOhm @ 9A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3785pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3F |
Package / Case: | TO-220-3 Full Pack |
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AOTF18N65L is a power field-effect transistor (FET) which was developed by Austria Opto Technologies (AOT) Designs. The device is well-suited for high voltage applications in automotive, industrial and consumer market applications.
AOTF18N65L device is constructed using a monolithic technology in which all the active elements of the FET (channel, gate, drain and source connection pads) are formed on a single substrate. This feature simplifies the assembly process and reduces both the size and cost of the FET. The device\'s rated drain-source voltage is 65V and its maximum drain current is 18A. The device has a maximum breakdown voltage of 150V and a minimum gate threshold voltage of 5V.
The AOTF18N65L device is based on a MOSFET technology, which stands for Metal Oxide Semiconductor Field Effect Transistor. MOSFET devices are composed of four principal components: gate, source, drain, and substrate. The source and drain are located at two opposite ends of the FET, while the gate is the control element that regulates the current flow between the source and drain. In the MOSFET, the gate is insulated from the rest of the device by a thin insulating layer made of silicon dioxide (SiO2) which is known as the "gate oxide". By applying a voltage to the gate, a depletion layer will form between the gate and the channel, thus controlling the current flow.
AOTF18N65L is mainly used in the following applications: AC-DC and DC-DC converter circuits, automotive ignition and ignition control modules, power switching circuits, LCD and LED driver circuits, microprocessor and ASIC circuits, lighting control systems, and motor control systems.
AOTF18N65L is well-suited for high-current applications, as it can handle up to 18A of drain current and up to 150V of drain to source voltage. It also has a high speed switching characteristic, making it ideal for power switching and motor control applications. Additionally, the device has a low gate threshold voltage, which is beneficial for low-voltage applications where a low gate voltage is needed for proper operation.
In conclusion, AOTF18N65L is a single power MOSFET that is perfect for high-voltage, high-current applications, such as AC-DC and DC-DC converter circuits, automotive ignition and ignition control modules, power switching circuits, LCD and LED driver circuits, microprocessor and ASIC circuits, lighting control systems, and motor control systems. The device\'s low gate threshold voltage and high breakdown voltage make it suitable for a variety of different applications.
The specific data is subject to PDF, and the above content is for reference
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