AOTF8N50 Allicdata Electronics
Allicdata Part #:

AOTF8N50-ND

Manufacturer Part#:

AOTF8N50

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 500V 8A TO220F
More Detail: N-Channel 500V 8A (Tc) 38.5W (Tc) Through Hole TO-...
DataSheet: AOTF8N50 datasheetAOTF8N50 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 38.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1042pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 850 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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AOTF8N50 is a field-effect transistor (FET) produced by Alpha & Omega Semiconductor (AOS) Corporation, and is a type of single MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor). AOTF8N50 is designed to provide an analog current as a function of applied voltage. This allows AOTF8N50 to be used in a variety of applications, such as electrical switching, amplifier circuits, and signal conditioning.

AOTF8N50 is a N-channel enhancement-mode MOSFET, meaning that it is a voltage-controlled device that operates in its activated state when the gate-to-source voltage is greater than a certain threshold voltage (Vth). In order for the MOSFET to remain in the conducting state, the applied gate-to-source voltage (Vgs) must remain greater than Vth, otherwise the MOSFET will turn off. Therefore, AOTF8N50 can be used to create either a high-gain or a low-gain switching device depending on the applied gate-to-source voltage.

The primary application field for AOTF8N50 it is in power supply circuits. These circuits rely on AOTF8N50\'s ability to switch rapidly between high-gain and low-gain states, allowing the power supply circuit to quickly increase or decrease power output as required. This high-speed switching is made possible through the use of the MOSFET\'s high gate input capacitance, which allows the gate voltage to charge and discharge quickly.

AOTF8N50 can also be used in applications such as timers and frequency generators, as it can be programmed to change frequency rapidly and accurately. This is made possible through the use of a dual gate circuit, in which two AOTF8N50s are connected in series to act as a digital switch. The two transistors are configured so that either one can be turned on, allowing the frequency of the circuit to be controlled. This allows the circuit to increase or decrease the frequency as needed.

Finally, AOTF8N50 can also be used as a voltage regulator. By applying a start voltage (Vstart) to the gate and a load voltage (Vload) to the load, the MOSFET can regulate the output voltage to a level between the two. This is done by using the transistor\'s capacitance to control the rate at which the voltage rises and falls, ensuring that the output voltage is always within an acceptable range.

In summary, AOTF8N50 is an extremely versatile MOSFET that can be used in a wide variety of applications. It can be used as a switch, an amplifier, a timer, and even a voltage regulator, making it a great choice for any circuit. With its ability to switch quickly and accurately, AOTF8N50 is an ideal device for any power management, signal conditioning, or frequency control applications.

The specific data is subject to PDF, and the above content is for reference

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