| Allicdata Part #: | 785-1608-5-ND |
| Manufacturer Part#: |
AOTF27S60L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 600V 27A TO220F |
| More Detail: | N-Channel 600V 27A (Tc) 50W (Tc) Through Hole TO-2... |
| DataSheet: |  AOTF27S60L Datasheet/PDF |
| Quantity: | 426 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220-3F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1294pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
| Series: | aMOS™ |
| Rds On (Max) @ Id, Vgs: | 160 mOhm @ 13.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 27A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Not For New Designs |
| Packaging: | Tube |
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AOTF27S60L is a type of single junction field effect transistor (FET). It is a N-channel transistor with breakdown voltage of 60 volts and maximum continuous drain current of 3.5 Amps. The device also has an optimal rise time of 5 ns, so it is suitable for high-speed applications. In terms of power management, the device has a low gate threshold voltage of 0.8V and on-resistance of 0.2 Ohm. AOTF27S60L is mainly used in power converters and motor drives.
AOTF27S60L has the same structure as other FETs, with the source connected to the drain, the gate separated from the other two terminals by a thin insulation layer. The channel between the source and the drain is formed by applying a voltage to the gate terminal. Depending on the voltage applied to the gate, the channel can be filled with carriers or it can be blocked. This makes the FET a very versatile component, because it can be used as a switch, or as an amplifier or even as an analog element.
The working principle of AOTF27S60L is quite simple. When the gate voltage is less than the threshold voltage, the FET is in the off state and there is no current flowing through the channel. However, when the gate voltage is increased and exceeds the threshold voltage, the FET is in the on state, and the channel is filled with a sufficient number of carriers, allowing current to flow through it.
The advantages of using AOTF27S60L are its low on-resistance and its low threshold voltage. The low on-resistance means that it can handle more current with less heating, and it can be used in more applications due to its low threshold voltage. It is also very reliable and efficient when compared to other FETs.
In conclusion, AOTF27S60L is a versatile single junction FET with several advantages over other FETs. It is suitable for high speed applications due to its optimal rise time of 5 ns and its low on-resistance and threshold voltage make it suitable for power management applications.
The specific data is subject to PDF, and the above content is for reference
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| AOTF12N50 | Alpha & ... | -- | 1000 | MOSFET N-CH 500V 12A TO22... |
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