| Allicdata Part #: | AOTF13N50-ND |
| Manufacturer Part#: |
AOTF13N50 |
| Price: | $ 0.53 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 500V 13A TO220F |
| More Detail: | N-Channel 500V 13A (Tc) 50W (Tc) Through Hole TO-2... |
| DataSheet: | AOTF13N50 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.47817 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220-3F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1633pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 510 mOhm @ 6.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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A MOSFET, or Metal Oxide Semiconductor Field Effect Transistor, is a type of transistor that is used for amplifying or switching signals within an electronic system. The AOTF13N50 is a particular MOSFET that is designed for operation in a voltage range of 60-100V and offers excellent rDS(ON) characteristics at 175mΩ. It can be used to provide a high current application with an extremely low leakage current.
A MOSFET making use of the AOTF13N50 can be used in multiple applications ranging from power management and high frequency switching to on/off switching in many types of electronic systems. In power management, the AOTF13N50 is usually used to regulate the flow of current or provide protection for the power devices that it is controlling. For example, it can be used in power conversion (DC/DC, AC/DC, etc.), as a high-speed switch in power switching circuits, or as a power protector in LED displays and LED driver circuits. In high frequency switching applications, the device is often used to amplify the signals in intermediate frequency (IF) stages and RF stages. Lastly, the device can be used to provide on/off switching in any number of applications ranging from automotive systems to telecommunications.
The working principle of the AOTF13N50 is fairly standard among MOSFETs. It is a voltage-controlled device and operates off of input voltage signals. The device has three pins: a drain, a source, and a gate. When a voltage is applied to the gate pin, it will pull the conductive channel between the source and drain pins. This creates a low resistor path between the two pins, allowing current to flow between them. This is the main way that signals are amplified or switched within an electric system, and the AOTF13N50 is designed to do this effectively and efficiently.
The AOTF13N50 MOSFET is an extremely versatile and reliable device that can be used in a multitude of applications with excellent results. It is designed for a wide range of voltages and offers remarkable low-RI capability for those applications in which current conduction is important. Whether it is used in power management, high frequency switching, or on/off switching, the AOTF13N50 is an ideal choice and a great addition to any electronic design.
The specific data is subject to PDF, and the above content is for reference
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AOTF13N50 Datasheet/PDF