
Allicdata Part #: | 785-1520-5-ND |
Manufacturer Part#: |
AOTF20S60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 20A TO220F |
More Detail: | N-Channel 600V 20A (Tc) 37.8W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 512 |
Vgs(th) (Max) @ Id: | 4.1V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 37.8W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1038pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19.8nC @ 10V |
Series: | aMOS™ |
Rds On (Max) @ Id, Vgs: | 199 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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AOTF20S60L is one of the most popular Single MOSFETs (Metal-Oxide Semiconductor Field-Effect Transistors) on the market today. This type of MOSFET has a wide variety of applications, including digital and analog applications, power supplies, switching power amplifiers, and more. AOTF20S60L MOSFETs are also commonly used in automotive, consumer, and industrial applications. Understanding the working principle of the AOTF20S60L is important for optimal operation and for design engineers and hobbyists who wish to use this product.
The AOTF20S60L is built around a silicon carbide channel layer that sits between two electrodes. The channel layer is sandwiched between a source and a drain, with a gate located above it along the channel’s axis. The gate is used to control the conductivity of the channel layer. When a positive voltage is applied to the gate, electrons in the channel layer move, decreasing the channel layer resistance, allowing more current to flow. When the gate voltage is decreased, fewer electrons move, and the resistance increases, restricting the current flow.
AOTF20S60L is a depletion-type device. This means that when the gate is uncharged and the gate-source voltage is zero, the gate-source transistor is off, and no current flows, as the channel layer is free of charge carriers and acts like an open circuit. This can be observed from the Timing Diagram chart, which shows the transition from VGS= 0 to 1.5V needed to turn the device on. This type of MOSFET also offers a low drain-source ON resistance, while providing low power dissipation even when the drain current is high. Additionally, the AOTF20S60L offers superior thermal performance because it is made with a silicon carbide body, which has a higher thermal conductivity than other MOSFETs.
AOTF20S60L is versatile enough to be used in a variety of applications. In digital logic circuits, AOTF20S60L is typically used in larger, low-power logic gates, or in smaller circuits that require high voltage or high current. In analog circuits, AOTF20S60L is used in power conversion, enabling power to be efficiently converted from high current, low-voltage sources to high voltage, low-current sources. It is also used in pulse-width-modulation circuits, which are used to control the speed of a motor, route electricity, or control the intensity of light to name just a few examples. Additionally, AOTF20S60L can be used in switching power supply circuits, as they are capable of quickly providing a high current while minimizing power losses.
AOTF20S60L MOSFETs are useful in a variety of applications, providing designers and hobbyists with a reliable and efficient solution. The AOTF20S60L’s ability to provide excellent thermal performance while handling a high current, make it well suited for a range of applications from digital and analog logic circuits to power conversion and switching power supply circuits. Understanding the device’s working principle and its various applications is essential for optimal operation and design.
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