Allicdata Part #: | AOTF7S65-ND |
Manufacturer Part#: |
AOTF7S65 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 7A TO220F |
More Detail: | N-Channel 650V 7A (Tc) 35W (Tc) Through Hole TO-22... |
DataSheet: | AOTF7S65 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 434pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 9.2nC @ 10V |
Series: | aMOS™ |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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AOTF7S65 Application Field and Working Principle
The AOTF7S65 is a monolithic MOSFET device with exceptional performance characteristics and power efficiency. This device offers significant improvements in terms of conductivity and low on-resistance. It is also very low cost compared to other similar devices.
Applications
The AOTF7S65 is designed to be used in a wide range of applications. It can be used as a driver for automotive applications, such as headlight controllers, and as a switching device for motor control, power conversion, and power amplifiers. In addition, the device can be used for low-frequency applications, such as AC motor control and frequency converters.
The device is also suited for high-frequency applications, such as high-frequency DC-DC converters and switching power supplies. It can be used for lighting circuits and LED driver circuits, as well as other high-power applications.
Advantages
The main advantage of the AOTF7S65 is its high current capability and low on-resistance. This allows for power savings and increased efficiency compared to other devices. The device also has very low gate-source capacitance and minimum gate-drain capacitance, which significantly reduce switching losses. The low input capacitance of the device also reduces the switching time, which is particularly beneficial in high-frequency applications.
The device is also highly reliable and has a long lifetime, making it an ideal choice for many applications. It has a rugged construction and is capable of handling up to the full rated power at 25°C.
Working Principle
The AOTF7S65 is a metal-oxide-semiconductor field-effect transistor (MOSFET). It works by the application of a voltage to the gate terminal of the device which changes the impedance of the channel between the source and the drain. As the gate voltage is increased, the channel widens and increases its conductivity. This increases the overall current flow between the source and the drain, which is determined by the applied voltage.
The drain-source voltage (VDS) also affects the resistance of the channel between the source and the drain. The higher the VDS, the lower the impedance of the channel and the higher the current flow. This makes the device ideal for power application.
Summary
The AOTF7S65 is a monolithic MOSFET device that offers excellent performance characteristics and power efficiency. It is designed for use in a wide range of applications, including automotive applications, motor control, power conversion, and high-frequency DC-DC converters. It features a very low gate-source capacitance and minimum gate-drain capacitance, which minimizes switching losses. The device is highly reliable, has a rugged construction, and can handle up to the full rated power at 25°C. It works on the principle of applying a voltage to the gate terminal of the device, which changes the impedance of the channel between the source and the drain.
The specific data is subject to PDF, and the above content is for reference
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