
Allicdata Part #: | AOTF11C60-ND |
Manufacturer Part#: |
AOTF11C60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 11A TO220F |
More Detail: | N-Channel 600V 11A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2010pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOTF11C60 is a single N-channel enhancement-mode field effect transistor (FET) intended for high frequency, high current applications. The AOTF11C60 has a wide range of applications in stereo audio amplifiers, digital cellular telephone chargers, DC/DC Figure-of-Eight converters, etc. This article outlines the main applications for the AOTF11C60, as well as its working principle.
This field effect transistor is mainly used in applications that require high current operation which calls for a high switching frequency. It has been designed to offer superior performance in high frequency applications. It offers superior performance as compared to earlier N-channel devices because its low gate to drain resistance allows it to handle high frequencies with minimal loss in current. With its low on-resistance and a 2.5 V gate threshold voltage, the AOTF11C60 is the right device for applications such as memory cell level shifters, low-voltage power MOSFET drivers, automotive audio amplifiers, DC/DC converter outputs, and other load-switching and power management applications.
The AOTF11C60 FET is composed of a P-type body and an N-type or N-well, respectively. The gate consists of a gate layer connected to a drain layer, a source layer, and a bulk layer. The source and the drain layers of the FET each contain one terminal for connecting to the external circuits. The gate terminal is connected to the external circuit, with a gate control voltage applied to the gate to control the current flowing between the source and the drain. The external circuit supplies the power for the AOTF11C60 FET.
The AOTF11C60 FET works on the principle of working by creating a channel of mobile carriers-electrons or holes-between the source and drain regions. The voltage applied to the gate controls the number of mobile carriers participating in the conduction process. When the voltage applied to the gate is greater than a certain value, the channel is formed and the FET becomes conductive. This is the principle by which the AOTF11C60 FET works. The fact that the AOTF11C60 features very low on-resistance and a high switching frequency makes it ideal for many applications.
One of the most common applications for the AOTF11C60 FET is as a driver in switching power supply applications. It is typically used to convert high-voltage AC voltage to low-voltage DC voltage, by controlling the gate of the FET and switching on and off the AC voltage supplied to the FET. The AOTF11C60 offers superior performance in such applications due to its low gate-to-drain resistance and high frequency capabilities.
The AOTF11C60 can also be used in audio amplifier circuits, where it can drive high-current loads with minimal loss. The device can also be used in automotive audio amplifiers, where it can provide superior power handling and audio performance. Further, the AOTF11C60 can also be used in low-voltage power MOSFET drivers and other Figure-of-Eight DC/DC converters to provide high current switching with good efficiency.
The AOTF11C60 is a versatile single N-channel FET which can be used in a variety of applications. Its wide operation range, low on-resistance, and high frequency capabilities extend its applications to power supplies, audio amplifier circuits, and load switching. The features of the AOTF11C60 make it the ideal device for applications requiring high frequency, high current switching.
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