Allicdata Part #: | AOTF14N50_002-ND |
Manufacturer Part#: |
AOTF14N50_002 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH TO220 |
More Detail: | N-Channel |
DataSheet: | AOTF14N50_002 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Last Time Buy |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | -- |
Supplier Device Package: | -- |
Package / Case: | -- |
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The AOTF14N50_002 is a robust and reliable MOSFET transistor, built to perform reliably in electrically demanding applications. It has a very low on-state resistance, making it ideal for use in high-speed switching applications. The AOTF14N50_002 uses a channel-type drain structure to help reduce junction capacitance and minimize switching losses. The MOSFET transistor employs advanced dielectric isolation technology to achieve higher power ratings with a smaller form factor. The AOTF14N50_002 has a high drain-source breakdown voltage of greater than 500V, making it suitable for use in a number of high voltage applications.
A MOSFET is basically a type of transistor that works by using an electric field to control the flow of an electrical current. MOSFETs have three terminals—the source, the drain, and the gate—which act as switches to control the flow of current between them. When a voltage is applied to the gate terminal, it creates an electric field, which controls the current between the source and the drain terminals. By controlling the voltage applied to the gate, the current flow can be controlled, making the MOSFET transistor incredibly useful and versatile in a number of different applications.
The AOTF14N50_002 is a single MOSFET transistor designed to provide robust and reliable electrical performance at high speeds. It has a very low on-state resistance of 18 mΩ, which helps to reduce switching losses and effectively increase circuit efficiency. The MOSFET transistor also has a high drain-source breakdown voltage of greater than 500V, making it suitable for use in high voltage applications. In addition, the transistor has a low gate-source capacitance and a low junction capacitance, making it ideal for use in high-speed switching applications.
The AOTF14N50_002 is ideal for a number of different applications, including automotive and industrial. In automotive applications, the transistor can be used for powertrain control applications such as power disable, intelligent ignition control, and power security control. The MOSFET transistor is also well-suited for industrial applications such as automated welding systems and electronic ballasts. Additionally, the device can be used in a variety of other applications such as voltage regulators, motor controllers, and LED drivers.
The AOTF14N50_002 is a robust and reliable MOSFET transistor that is well-suited for a variety of high-speed switching applications. With its advanced dielectric isolation technology, low on-state resistance, and high drain-source breakdown voltage, the device can provide reliable electrical performance in demanding situations. This makes it an excellent choice for automotive, industrial, and many other applications.
The specific data is subject to PDF, and the above content is for reference
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