Allicdata Part #: | APTMC120AM25CT3AG-ND |
Manufacturer Part#: |
APTMC120AM25CT3AG |
Price: | $ 334.85 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 1200V 105A SP3F |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2k... |
DataSheet: | APTMC120AM25CT3AG Datasheet/PDF |
Quantity: | 11 |
1 +: | $ 304.41000 |
10 +: | $ 293.13500 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 105A |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 80A, 20V |
Vgs(th) (Max) @ Id: | 2.2V @ 4mA (Typ) |
Gate Charge (Qg) (Max) @ Vgs: | 197nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3800pF @ 1000V |
Power - Max: | 500W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
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APTMC120AM25CT3AG is a highly effective transistor array specifically constructed for driving the high gate capacitance and current requirements of MOSFETs and IGBTs. It features an N-channel MOSFET style driver with a wide variety of logic levels, programmable disable/enable functions and an integrated protection circuit. The device is suitable for applications such as DC and AC operation, linear and PWM control, and high voltage power switching. This article will explain the application field of the APTMC120AM25CT3AG and its working principles.
Application Field of APTMC120AM25CT3AG
The APTMC120AM25CT3AG is ideal for activities that require driving the high gate capacitance and current requirements of MOSFETs and IGBTs. Examples of such operations include linear power control, pulsewidth modulation, DC and AC switching, as well as short-term inverter operation. It is also suitable as a driver for high power MOSFETs and IGBTs operating in medium to high voltage ranges (17-45 V).
The device provides efficient and reliable control of high power devices with minimal switching loss. It is also an ideal application for 3-phase motor control, three-leg DC-AC converters, lighting system drivers and uninterruptible power supplies.
In addition, it is suitable for supplying power to end-use applications such as large home appliances, renewable energy instruments, and various industrial motor-driven applications.
Working Principle of APTMC120AM25CT3AG
The APTMC120AM25CT3AG is a N-channel MOSFET style driver with a wide variety of logic levels, programmable disable/enable functions and an integrated protection circuit. The device is designed to help maintain an optimized switching throughput even with varying voltage and load conditions.
The device operates through the use of two transistors: the gate driver transistor, which is responsible for controlling the turn-on and turn-off of the MOSFET, and the integrated protection transistor, which is designed to help protect the MOSFET against over-current and over-voltage conditions. For added protection, a reverse polarity protection function is also integrated into the device.
The device also features a "power save" mode of operation. When enabled, it enters a low-power state in which the current draw is reduced for improved efficiency. This mode of operation is especially beneficial when operating in higher voltage environments.
In addition to the integrated protection circuit, the device also features a short delay delay which allows the gate driver transistor to turn-off at a predetermined rate. This helps ensure better control during the OFF state of the MOSFET, resulting in improved power dissipation, faster turn-on times, and suppressed transients.
Conclusion
The APTMC120AM25CT3AG is a highly reliable and efficient transistor array designed to drive the high gate capacitance and current requirements of MOSFETs and IGBTs. It is suitable for a wide range of applications, including linear power control, pulsewidth modulation, DC and AC switching, and short-term inverter operation. The integrated protection transistor and reverse polarity protection functions provide added protection and efficiency in various operating environments. The device also features a power save mode of operation, which enables a low-power state that further reduces the current draw.
The specific data is subject to PDF, and the above content is for reference
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