APTM120DU29TG

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The APTM120DU29TG is a highly advanced power MOSFET array, designed for high-density, high-efficiency and high-power applications. It is suitable for applications such as power amplifiers, power supplies, motor control, and telecommunication. This article will explore the application field and working principle of the APTM120DU29TG power MOSFET array.

The APTM120DU29TG is based on the latest IGBT power architecture design with the latest high-temperature junctions, which is ideal for low-voltage applications up to 650V. The device includes a comprehensive package series ranging from 4mm x 4mm to 6mm x 8mm and can operate at junction temperatures up to 125°C. This makes it ideal for a wide range of applications including power supplies, automotive, lighting, LED drivers, start-stop, battery management, and telecommunication.

The power MOSFET array features an Advanced Power MOSFET (APTM) technology that provides a high current handling capacity, up to 20A, a low on-resistance, and a fast switching speed. Additionally, the APTM120DU29TG uses a direct P-well source feature, which reduces the cell on-resistance by up to 25% compared to conventional MOSFETs. The advanced MOSFETs are designed with a rugged structure, which minimizes the effects of simultaneous switching noise on the device.

When it comes to the working principle of the APTM120DU29TG power MOSFET array, the device utilizes very high gain N-channel enhancement-mode MOSFETs. These MOSFETs are connected in parallel, forming an array of four parallel-connected N-channel MOSFETs. The device features a separate control circuitry with low on-resistance and very fast switching time of about 250 nS. The array operates by applying a single gate-drive signal input to the entire array, and this signal is capable of controlling up to four internal MOSFETs.

The high switching speed of the APTM120DU29TG makes it an ideal choice for high-power applications. This device is capable of operating at frequencies up to 2GHz and is suitable for high-speed switching applications in telecommunication and automotive applications. The device also has a low gate-charge characteristics, resulting in low switching losses and providing a high power-switching efficiency.

The APTM120DU29TG is a highly advanced power MOSFET array that is suitable for a wide range of high-density, high-efficiency, and high-power applications. It offers an Advanced Power MOSFET technology with a direct P-well source feature that increases its power efficiency and reduces cell on-resistance and it operates by applying a single gate-drive signal to the entire array. The device features a separate control circuitry with low on-resistance and a very fast switching time of about 250 nS. It is capable of operating at frequencies up to 2GHz and is suitable for high-speed switching applications in telecommunication and automotive applications.

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