Allicdata Part #: | APTM10TDUM09PG-ND |
Manufacturer Part#: |
APTM10TDUM09PG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 6N-CH 100V 139A SP6-P |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 139... |
DataSheet: | APTM10TDUM09PG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 139A |
Rds On (Max) @ Id, Vgs: | 10 mOhm @ 69.5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 350nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 9875pF @ 25V |
Power - Max: | 390W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6-P |
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APTM10TDUM09PG Application Field and Working Principle
APTM10TDUM09PG is an array of triple-diffused metal-oxide semiconductors (MOS) Field Effect transistors (FET). These transistors are typically used as power amplifiers or in power switching applications as they possess high current capabilities resulting in low power losses. They are used in a range of fields including automotive, industrial, and consumer electronics.
Structure of an APTM10TDUM09PG
The structure of an APTM10TDUM09PG consists of three main sections. The first section is the gate structure, which is the controlling element of the transistor. It consists of a metal gate surrounded by a dielectric barrier, which insulates the gate from the silicon bulk. The second section is the drain, which is the output terminal for the electrical current. The third section is the source, which is the input of the electric current.
Working Principle of an APTM10TDUM09PG
When a voltage is applied to the gate of an APTM10TDUM09PG, the electric field created between the gate and the silicon bulk alters the conductivity of the channel beneath the gate. This change in conductivity modulates the current between the source and the drain of the transistor, allowing the transistor to be used as an electronic switch or as an amplifier. It is this ability to be switched that makes these transistors applicable in a range of applications.
Applications of APTM10TDUM09PG
APTM10TDUM09PG is commonly used in automotive applications due to their high current capability. They offer increased safety due to the insulation between the gate and the silicon bulk, which prevents short circuits and overloading. They are also used in industrial applications such as process control and machine automation, where switching and power amplifiers are used. They are also well suited for consumer electronics, as they are light and small, able to fit into compact spaces and require less power for operation.
Conclusion
In conclusion, APTM10TDUM09PG is a power-efficient array of triple-diffused metal-oxide semiconductor Field Effect transistors. Its versatile switching ability makes it suitable for a variety of applications, including automotive, industrial, and consumer electronics. The insulation offered by these transistors prevents short circuits and overloading, making them a safe, reliable option for power amplifiers or power switching applications.
The specific data is subject to PDF, and the above content is for reference
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