Allicdata Part #: | APTM120TDU57PG-ND |
Manufacturer Part#: |
APTM120TDU57PG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 6N-CH 1200V 17A SP6-P |
More Detail: | Mosfet Array 6 N-Channel (3-Phase Bridge) 1200V (1... |
DataSheet: | APTM120TDU57PG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 6 N-Channel (3-Phase Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 17A |
Rds On (Max) @ Id, Vgs: | 684 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 187nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5155pF @ 25V |
Power - Max: | 390W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6-P |
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A Power Metal-Oxide-Silicon Field-Effect Transistor (MOSFET), applied in the classification of transistors- FETs, MOSFETs- Arrays, is the APTM120TDU57PG. A MOSFET is a primarily a unipolar transistor device, used for controlling and amplifying electrical signals. The APTM120TDU57PG is characterized by lower power dissipation, a wide operating temperature range, outstanding EMI performance, and termination-compatibility.
The structure of the APTM120TDU57PG allows for it to have economical power control with high frequency operations, efficiently working in pagers and cordless phones. The semiconductor chip in the APTM120TDU57PG is connected to a metal plate, or gate. When there is potential applied to the gate, current is effectively transferring between the source and drain. The APTM120TDU57PG is then also able to employ this current. With a reliable surge protection circuit and a low voltage operation, the device is suitable for both small and large current operating power requirements.
The APTM120TDU57PG is particularly designed to be stable, providing a wide operating temperature range, low power consumption and facility access feature. The APTM120TDU57PG is also suitable for high frequency applications, such as relay operations, in small batteries and equipment where space is a limitation. Extremely low input capacitance give the APTM120TDU57PG fast switching times, making data transmission easier and more reliable. With protection circuitry and EMI shielding for both its input and output, the APTM120TDU57PG is an ideal workhorse for many power supply applications.
The working principle of the APTM120TDU57PG is in its ability to create electrical field control. By switching an electrical field on and off, the device creates a circuit that has current passing between the gate and source. When the electrical field is applied, the gate is opened and current passes between the source and the drain. As the potential decreases, the gate is closed and current no longer passes. This allows for controllable power distribution.
The applications of the APTM120TDU57PG vary largely depending upon the current and frequency requirements. The MOSFET is suitable for frequency switching and relay operations, particularly within the range of 10kHz to 10MHz. This enables use in a range of Variable Frequency Drives (VFDs), low voltage switching power supplies, and vehicle electronics, allowing for efficient power control. With its reliable surge protection circuit, the device is also able to protect against short circuits, surges and other extreme conditions, making it a great choice for industrial and mobile applications.
The APTM120TDU57PG is a reliable and efficient MOSFET choice for many power control applications. The low power dissipation, wide operating temperature range, and featured EMI performance makes the APTM120TDU57PG a great workhorse for many electrical systems. With a reliable and swift power control, the device is suitable for a number of applications, having the ability to switch current efficiently and switching electrical fields in a fast and reliable manner.
The specific data is subject to PDF, and the above content is for reference
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