Allicdata Part #: | APTM100A40FT1G-ND |
Manufacturer Part#: |
APTM100A40FT1G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 1000V 21A SP1 |
More Detail: | Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV)... |
DataSheet: | APTM100A40FT1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25°C: | 21A |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 305nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 7868pF @ 25V |
Power - Max: | 390W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP1 |
Supplier Device Package: | SP1 |
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The APTM100A40FT1G is a commonly used transistor array in which four, 10A Field-Effect Transistors (FETs) are insulated for simultaneous, high switch-speed opera3tion. The APTM100A40FT1G is an excellent option for applications that require the development of reliable electrical connections between various electronic components and devices while offering performance enhancements due to its increased frequency and current handling capabilities.
The APTM100A40FT1G belongs to the family of Field-Effect Transistors (FETs) and utilizes metal-oxide semiconductor (MOS) technology to provide a high frequency, low noise switching device. The device contains four metal-oxide-semiconductor field-effect transistors (MOSFETs) with an integrated gate protection diode.
The working principles of the APTM100A40FT1G is fairly straightforward. The metal-oxide-semiconductor transistors in the device switch the current passing through the device on and off with the help of a voltage applied to the source of the FET. This voltage is applied through a resistor, which acts as a gate between the transistor and the source. This gate is also connected to an external power source, which provides the voltage to operate the transistor. When the voltage is applied to the gate, it creates a field that deflects the electrons from the source to the drain of the transistor, allowing the current to pass through. The drain then carries the current to its intended destination.
The APTM100A40FT1G is an ideal device for applications involving high quality current control, low power consumption and high speed switching. Typical applications include circuit switching, telecom switching, power switching, voltage regulation, and automotive power supply controllers. The device can also be used to provide protection against short circuits in switching or relay applications. In addition, the APTM100A40FT1G provides improved immunity to electrical noise, EMI and RFI, making it a great choice in noise-sensitive applications.
Overall, the APTM100A40FT1G is a reliable, versatile device that is well-suited for a wide range of applications. Its high-speed switching capability, combined with its low-power consumption and excellent noise immunity make it an excellent choice for any application requiring a reliable and efficient switching solution.
The specific data is subject to PDF, and the above content is for reference
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