Allicdata Part #: | APTM120H57FTG-ND |
Manufacturer Part#: |
APTM120H57FTG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 1200V 17A SP4 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 1200V (1.2kV) ... |
DataSheet: | APTM120H57FTG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 17A |
Rds On (Max) @ Id, Vgs: | 684 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 187nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5155pF @ 25V |
Power - Max: | 390W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP4 |
Supplier Device Package: | SP4 |
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The APTM120H57FTG is part of an array of transistors known as field effect transistors, or FETs, and more particularly, as MOSFETs, which stands for metal-oxide-semiconductor field-effect transistor. This particular MOSFET is specifically designed to have multiple input/output structure, allowing it to be used in a variety of applications that require more than one input/output gate.
A MOSFET is a transistor consisting of two or more p-n junction diodes with an insulated gate electrode in between. Essentially, its circuitry allows for a voltage applied on the gate terminal to control the current flow from the drain to the source. This therefore allows the transistors to be used as amplifiers and switches in many applications that require the control of current flow.
The APTM120H57FTG is part of an array of MOSFETs that feature an array of adjustable resistors connected in parallel, offering increased circuit protection and enhanced performance. With this array, current flow is controlled in a more efficient manner than if just one resistor had been used. This makes it useful in a variety of applications requiring multiple input/output gates.
One of the key applications of the APTM120H57FTG is in power management systems. In such systems, the APTM120H57FTG can be used to accurately control the power level supplied to different components, such as processor cores, memory devices, and peripherals. Additionally, the APTM120H57FTG can be used to adjust the speed or frequency of a source of power, providing greater flexibility to the system.
Another application of the APTM120H57FTG is in field effect sensor technology. In this type of sensor, the APTM120H57FTG is used to detect and respond to changes in the environment. The voltage level applied to the gate is changed and the current flow is regulated according to the environment conditions, allowing the sensor to accurately detect and respond to the changes.
Finally, the APTM120H57FTG can also be used in the production of integrated circuits. By regulating the current flow of the array, this MOSFET allows circuit components to be more accurately placed, and thus increasing the efficiency of the production process.
To sum up, the APTM120H57FTG is an array of MOSFETs specifically designed to allow improved circuit protection, increased performance, and improved current control. It is well suited for applications in power management systems, field effect sensing, and integrated circuit production.
The specific data is subject to PDF, and the above content is for reference
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