Allicdata Part #: | APTM120H57FT3G-ND |
Manufacturer Part#: |
APTM120H57FT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 1200V 17A SP3 |
More Detail: | Mosfet Array 4 N-Channel (H-Bridge) 1200V (1.2kV) ... |
DataSheet: | APTM120H57FT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 4 N-Channel (H-Bridge) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 17A |
Rds On (Max) @ Id, Vgs: | 684 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 187nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5155pF @ 25V |
Power - Max: | 390W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
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The APTM120H57FT3G is an integrated circuit device that can be used in various applications. It is an N-type Metal Oxide Semiconductor Field-Effect Transistor array (MOSFET array) that contains 12 identical power FETs, each of which features independent input, output, and gate protection. The device also features a built-in drain-source shutting protection circuit for enhanced safety.
Features of the APTM120H57FT3G
The APTM120H57FT3G is a MOSFET array with the following features:
- Built-in drain-source shutting protection circuit (built-in shutdown circuit).
- High input impedance and high sensitivity.
- Low on-state resistance (RDS(ON)).
- Superior thermal and electrical characteristics.
- Small package size.
Applications of the APTM120H57FT3G
The APTM120H57FT3G is used in a variety of applications, including:
- Switching power supply applications.
- Motor control.
- Smart home and building automation.
- Industrial and automotive control technology.
- Adaptive cruise control.
Working Principle of the APTM120H57FT3G
The APTM120H57FT3G is an N-type MOSFET array that consists of 12 FETs. The FETs are connected in parallel and each FET features an independent input, output, and gate protection. The device works by allowing a small current to flow between the source and drain when a voltage is applied to the gate. When the gate voltage is removed, the FETs are what is known as “off”. This means that no current is allowed to flow between the source and the drain. This allows the APTM120H57FT3G to be used for switching power supplies, motor control, and other applications. Furthermore, the built-in shutoff protection circuit ensures that the device will not be subject to overcurrent or overvoltage conditions.
Conclusion
The APTM120H57FT3G is an integrated circuit device that can be used in various applications, such as switching power supply applications, motor control, and smart home and building automation. The device consists of 12 identical power FETs and features a built-in drain-source shutting protection circuit that ensures the device will not be subject to overcurrent or overvoltage conditions. By allowing a small current to flow when a voltage is applied to the gate and preventing any current from flowing when the gate voltage is removed, the APTM120H57FT3G can be used for various applications, such as switching power supplies, motor control, and adaptive cruise control.
The specific data is subject to PDF, and the above content is for reference
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