APTM10AM02FG Allicdata Electronics
Allicdata Part #:

APTM10AM02FG-ND

Manufacturer Part#:

APTM10AM02FG

Price: $ 134.95
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 100V 495A SP6
More Detail: Mosfet Array 2 N-Channel (Half Bridge) 100V 495A 1...
DataSheet: APTM10AM02FG datasheetAPTM10AM02FG Datasheet/PDF
Quantity: 75
1 +: $ 122.68000
10 +: $ 116.75400
25 +: $ 112.52400
Stock 75Can Ship Immediately
$ 134.95
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 495A
Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Power - Max: 1250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Description

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The APTM10AM02FG is an array of field-effect transistors (FETs) primarily used for power management, for instance to boost signals for data processing. FETs are active solid-state electronic components that can be used to control the flow of electrical current in circuits. In this particular array, there are two FETs connected in a cascode configuration, as well as two in a single common source configuration.

A FET is a voltage-controlled field-effect transistor, which means that its electrical characteristics can be influenced by the voltage applied to its input. In the cascode configuration, one FET is connected in a common source configuration with the second FET connected in a source follower configuration. The combination of these two configurations creates a high input impedance, which allows for greater control of the output current.

The APTM10AM02FG’s architecture also features an on-channel P-N junction integrated circuit (IC) that takes the cascode and single common source configurations and enables it to form an analog-to-digital interface. This IC has a pair of band-gap voltage references and match circuits, which allow it to accurately control and measure relative voltages.

The APTM10AM02FG array also includes an integrated bootstrap circuit, which helps protect the FETs from voltage spikes and draw higher currents. These FETs are equipped with an adjustable gate-capacitor network, providing an additional layer of protection against voltage spikes. Additionally, the array includes an integrated clock generator and synchronization circuit, which ensures that the array can operate at the same frequency and run pulses with minimal skew.

The APTM10AM02FG array uses a Depletion-mode Technology, combined with a Multi-Level Enhancement (MLE) Structure, to achieve a combination of extremely high performance and very low power consumption. The MLE Structure enables the FETs to have a wide range of operation from subthreshold to saturation, allowing for specific performance requirements to be met.

The key principle behind the APTM10AM02FG array is the utilization of FETs to control the flow of electrical current in a circuit. By using a cascode configuration, with an on-channel IC, an adjustable gate capacitor network, and a bootstrap circuit, the array can successfully control and protect the current, while also providing the necessary accuracy, protection and synchronization to ensure that the desired results are achieved.

The specific data is subject to PDF, and the above content is for reference

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