APTM120DSK57T3G

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	17A
Rds On (Max) @ Id, Vgs:	684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:	5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:	187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	5155pF @ 25V
Power - Max:	390W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	SP3
Supplier Device Package:	SP3

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Introduction to APTM120DSK57T3G
The APTM120DSK57T3G is a high performance Quad N/P-channel MOSFET Array integrated circuit made from advanced Trench MOSFET technology with an extended temperature range of -55 degrees C to 175 degrees C. This device combines four N & P-channel enhancement mode power MOSFETs designed for high voltage load switching applications in a single package. It has four independent control inputs and utilizes a staggered interlock connection between the integrated circuits. This integration reduces board space requirements, provides enhanced signal levels, and increases reliability.Application Fields
The APTM120DSK57T3G is primarily used in high-voltage switching applications, such as motor starting and power control. This device is well suited for high-power applications, including battery powered circuits and portable electronic devices, as well as for high-current switching for lighting and industrial applications. It is also widely used in the telecommunications industry for telephone line protecting and switching applications.Working Principle
The APTM120DSK57T3G is a Quad N/P-channel MOSFET array. It works on the principle of metal oxide semiconductor field effect transistor (MOSFET) technology. MOSFETs utilize an electric field to control the flow of current between two electrodes. This is achieved by applying a voltage to the gate terminal of the transistor, which modulates the movement of electrons between the source and drain terminals. In power MOSFETs, the gate terminal is connected to the drain terminal, which creates a depletion region around the drain. This region acts as a barrier for current flow, and can be controlled by the gate voltage applied to the transistor. When the gate voltage increases, the drain current increases exponentially.In the case of the APTM120DSK57T3G, four independent N & P-channel MOSFETs are integrated into a single package for high voltage load switching applications. Each of the four independent control inputs is used to individually control the operation of each MOSFET within the array. A staggered interlock connection between the integrated circuits reduces board space requirements and provides enhanced signal levels. The device features low turn-on and turn-off times and improved efficiency over other solutions.Conclusion
The APTM120DSK57T3G is a high power MOSFET array integrated circuit designed for use in high-voltage switching applications. It combines four N & P-channel enhancement mode power MOSFETs in a single package and utilizes a staggered interlock connection between the integrated circuits to reduce board space requirements and improve signal levels. This device is well suited for motor control, power control, battery powered circuits and portable electronic devices, as well as for switching applications in the telecommunications industry.

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