APTM10TDUM19PG Allicdata Electronics
Allicdata Part #:

APTM10TDUM19PG-ND

Manufacturer Part#:

APTM10TDUM19PG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 6N-CH 100V 70A SP6-P
More Detail: Mosfet Array 6 N-Channel (3-Phase Bridge) 100V 70A...
DataSheet: APTM10TDUM19PG datasheetAPTM10TDUM19PG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Rds On (Max) @ Id, Vgs: 21 mOhm @ 35A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P
Description

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The APTM10TDUM19PG is an integrated 10-channel N-channel MOSFET array from Alpha and Omega (AOS) Semi. It is an array made of an individual N-channel MOSFETs with multiple gates and drain-source junctions. For each of the 10 transistors, the same identical gate, body and drain-source connections are employed. The MOSFETs are fully isolated, meaning that the devices can be turned on and off independently without disturbing the current of the other transistors.

This makes the APTM10TDUM19PG an ideal choice for applications where a high degree of reliability is required. For example, a 10-channel array in a motor drive control circuit, where each channel is independently controllable, can provide a more reliable and robust system. In fact, many of AOS’s MOSFET arrays are used in high-performance motor control applications.

The working principle of the APTM10TDUM19PG is based on the characteristics of the MOSFETs used to create the array. Generally speaking, MOSFETs feature very low on-resistance with high switching speed, excellent noise immunity and extremely high power efficiency, giving them a distinct advantage over other types of transistors.

In order to turn on and off the transistors, a voltage is applied to their gates. When the gates are connected to a positive voltage relative to their sources, the MOSFET channels become conductive and carry current between the source and the drain. Conversely, if the voltage at the gate is negative, the channel is not conductive, halting the flow of current.

For the APTM10TDUM19PG, the same process applies, but with the addition of a fifth gate pin connection which provides extra control for the 10 transistors. By applying voltages to the fifth gate connection, the on-resistance of the MOSFET can be controlled – enabling users to adjust the performance of their circuits with greater precision.

Overall, the APTM10TDUM19PG is an ideal device for powering high-performance, high-reliability motor drive circuits. Its 10 separate transistors can be easily and independently controlled by applying voltages to their gates, while the fifth gate connection allows users to fine-tune the performance of each transistor. All of these features make the APTM10TDUM19PG a highly versatile and powerful MOSFET array.

The specific data is subject to PDF, and the above content is for reference

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