Allicdata Part #: | APTM120DDA57T3G-ND |
Manufacturer Part#: |
APTM120DDA57T3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 2N-CH 1200V 17A SP3 |
More Detail: | Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 17A ... |
DataSheet: | APTM120DDA57T3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 17A |
Rds On (Max) @ Id, Vgs: | 684 mOhm @ 8.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 187nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 5155pF @ 25V |
Power - Max: | 390W |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP3 |
Supplier Device Package: | SP3 |
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Introduction
The APTM120DDA57T3G is a three-gate array field-effect transistor (FET) from Analogue Technology Corporation. It is specifically designed for switching, audio, and various low frequency applications. It has three N-channel MOSFETs in a DIP package, mounted together with each gate embedded in a common copper drain lead frame. This device is well suited for several reasons: the three gates are independent of each other, and the common drain leads to efficient current sharing, resulting in high power dissipation. It also helps to reduce circuit complexity by allowing the three FETs to share a single source lead. This reduces the number of interconnection leads that are required, leading to improved signal integrity.
Application field
The APTM120DDA57T3G is well suited for many low frequency applications, such as driving bridge and high side drivers, guitar preamps, differential amplifiers, and buffer circuits. It is also ideal for switching applications in audio systems, eliminating the need for additional signal paths while providing compatibility with most pre-existing devices. The device is also suitable for sensor and signal conditioning circuits. Furthermore, it can be employed in AC/DC converters, power controllers, and motor controllers.
Working principle
The APTM120DDA57T3G consists of three independently controlled N-channel MOSFETs, each with a drain, gate, and source lead. The source lead is common to all three FETs and the drain leads are common to all three gates, thus forming a three-way connection. The FETs are operated by varying the voltage applied to the gates. When the voltage at the gate is zero, the FET is completely turned off, whereas higher voltages cause the device to conduct more current. The APTM120DDA57T3G has very high transconductance and can therefore handle high frequencies with ease. It has low input and output capacitance, which makes it suitable for high-speed switching. Moreover, the device has low on-state resistance, allowing for less overall power consumption in the application.
Conclusion
The APTM120DDA57T3G provides a versatile solution for many low frequency applications. Its three independent gate structure allows for independent control and thus reduces the complexity of the circuit. Additionally, the common source lead simplifies interconnection leads, leading to improved signal integrity. Its high transconductance and low capacitance make it suitable for high speed switching, while its low on-state resistance helps to reduce power consumption. Overall, the APTM120DDA57T3G is an excellent choice for driving bridge and high side drivers, guitar preamps, differential amplifiers, and many other low frequency applications.
The specific data is subject to PDF, and the above content is for reference
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