APTM120DDA57T3G Allicdata Electronics
Allicdata Part #:

APTM120DDA57T3G-ND

Manufacturer Part#:

APTM120DDA57T3G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET 2N-CH 1200V 17A SP3
More Detail: Mosfet Array 2 N-Channel (Dual) 1200V (1.2kV) 17A ...
DataSheet: APTM120DDA57T3G datasheetAPTM120DDA57T3G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Description

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Introduction

The APTM120DDA57T3G is a three-gate array field-effect transistor (FET) from Analogue Technology Corporation. It is specifically designed for switching, audio, and various low frequency applications. It has three N-channel MOSFETs in a DIP package, mounted together with each gate embedded in a common copper drain lead frame. This device is well suited for several reasons: the three gates are independent of each other, and the common drain leads to efficient current sharing, resulting in high power dissipation. It also helps to reduce circuit complexity by allowing the three FETs to share a single source lead. This reduces the number of interconnection leads that are required, leading to improved signal integrity.

Application field

The APTM120DDA57T3G is well suited for many low frequency applications, such as driving bridge and high side drivers, guitar preamps, differential amplifiers, and buffer circuits. It is also ideal for switching applications in audio systems, eliminating the need for additional signal paths while providing compatibility with most pre-existing devices. The device is also suitable for sensor and signal conditioning circuits. Furthermore, it can be employed in AC/DC converters, power controllers, and motor controllers.

Working principle

The APTM120DDA57T3G consists of three independently controlled N-channel MOSFETs, each with a drain, gate, and source lead. The source lead is common to all three FETs and the drain leads are common to all three gates, thus forming a three-way connection. The FETs are operated by varying the voltage applied to the gates. When the voltage at the gate is zero, the FET is completely turned off, whereas higher voltages cause the device to conduct more current. The APTM120DDA57T3G has very high transconductance and can therefore handle high frequencies with ease. It has low input and output capacitance, which makes it suitable for high-speed switching. Moreover, the device has low on-state resistance, allowing for less overall power consumption in the application.

Conclusion

The APTM120DDA57T3G provides a versatile solution for many low frequency applications. Its three independent gate structure allows for independent control and thus reduces the complexity of the circuit. Additionally, the common source lead simplifies interconnection leads, leading to improved signal integrity. Its high transconductance and low capacitance make it suitable for high speed switching, while its low on-state resistance helps to reduce power consumption. Overall, the APTM120DDA57T3G is an excellent choice for driving bridge and high side drivers, guitar preamps, differential amplifiers, and many other low frequency applications.

The specific data is subject to PDF, and the above content is for reference

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