APTM100A23SCTG

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The APTM100A23SCTG is a high voltage, high speed vertical mosfet array, designed specially to perform in new and innovative applications. It integrates four vertical MOSFETs into a single package, allowing a greater range of current carrying capacity, faster switching times and improved performance in both high voltage and very low voltage applications.

The device contains four independently-controlled N-Channel power main MOSFETs, optimised for high voltage operation, housed in a TO-220-type package with several source pins. Each of the four blocks, arranged in the center of the device, is composed of 1 MOSFET power discrete and 1 MOSFET power controller. The arrangement of the components offers extremely high speed switching and excellent transient thermal performance.

The APTM100A23SCTG is an ideal fit for applications where high speed switching, low on-resistance and high power density are required, such as in DC-DC and battery applications, motor drives, lighting control and consumer electronics, among others.

The working principle of the APTM100A23SCTG device is centered around the selection of the correct MOSFET power controller and the power discrete, both of which provide an extra layer of protection against over-voltage and thermal conditions, allowing a greater margin of error in the design.

The power controller works by detecting the difference between the voltage supplied and the voltage on the power source. This detection is then used to control the gate-source voltage, in order to regulate the current, which results in a stable output voltage.

The power discrete is responsible for dissipating the excess energy generated during the operation of the device. This energy is diverted to an external heat sink or dissipated inside the device, depending on the operating conditions.

In conclusion, the APTM100A23SCTG is a highly-regulated, high-speed, high-voltage vertical MOSFET array designed to provide excellent performance in a range of applications. Its driver and power MOSFETs provide increased current carrying capacity, as well as superior thermal performance and low on-resistance. This makes it ideal for a wide variety of high-voltage applications where high speed switching and low on-resistance are required.

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